Dr. Sulagna Chatterjee
University of Burdwan, Indian Association for the Cultivation of Science, University of Calcutta, Adamas University
About
Dr. Sulagna Chatterjee received a B.Sc. in Electronics Honours from Gokhale Memorial Girls’ College, University of Calcutta. She was awarded the National MERIT scholarship by Govt. Of India for her performance in B.Sc. Honours. She did her M.Sc. in Electronic Science from the department of Electronic Science, University of Calcutta. Then she did her M.Tech. in Radio Physics and Electronics from Institute of Radio Physics and Electronics, University of Calcutta, Raja Bazar Campus, where she stood FIRST CLASS FIRST and was AWARDED THE GOLD MEDAL and also was AWARDED Pareshlal Dhar Bhowmick Book Award for OUTSTANDING ACADEMIC EXCELLENCE by scoring a CGPA of 9.09. She won many prestigious fellowships for her Ph.D., namely, CSIR (Senior Research Fellow) (Govt. of India), Dept. of Science and Technology (DST) Scholarship (Govt. of India) and I.I.T. Institute Fellowship for Ph.D. in the Dept. of Electronics and Electrical Communication Engineering (I.I.T. Kharagpur). She has obtained her Ph.D. (Tech.) degree in Nano Science and Nano Technology, in April, 2019 from Centre for Research in Nanoscience and Nanotechnology, University of Calcutta. She was RESEARCH ASSOCIATE in the School of Physical Sciences at INDIAN ASSOCIATION for the CULTIVATION of SCIENCE. And she is currently serving as ASSISTANT PROFESSOR in the Dept. of ELECTRONICS at ABHEDANANDA MAHAVIDYALAYA, by qualifying WEST BENGAL COLLEGE SERVICE COMMISSION. She has more than fifteen years of teaching and research experience. Her English proficiency and over erudition are excellent as she has studied throughout from South Point School and High School, which is one of the best institutions in Asia.
She has been awarded in various categories of the prestigious InSc Awards, namely, Young Achiever, Research Excellence, Academic Excellence and Best Teacher for the year 2020.
She is a reviewer in esteemed
journals, Elsevier international journal Materials and Design (impact factor: 4.364) and Advances in
Science, Technology and Engineering Systems Journal (ASTESJ) in several subjects such as:
NanoScience and Nanotechnology, Applied Physics, Electronics Engineering, Materials Science. She has been invited as a speaker and renowned expert of her field in various international conferences
of repute. She has received several best reviewer awards for several consecutive years till now from reputed publishers like Elsevier and others.
She has published 15 High Impact, SCI, international journal papers as First Author and many as co author, several reputed international book chapters and conference papers.
Summary of professional skills:
1) Nanoscale strain modelling
2) Low dimensional quantum mechanics
3) Semiconductor device physics
4) Band-structure and mobility engineering in Si, III-V, II-VI and Graphene-like 2D material-based two and three terminal devices with 3D, 2D and 1D transport region.
5) High frequency opto-electronic and bio-medical devices.
6) Spintronics, spin-engineering
7) Modeling through self-designed in-house simulators
8) Software packages: ANSYS Multiphysics, Silvaco Atlas, Matlab, etc.
9) Programming languages: C, C++, Java, Python, etc. (Stood first with grade A from DOEACC, Jadavpur University).
Employment
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University of Burdwan Assistant Professor2023 - Present
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Indian Association for the Cultivation of Science2023 - 2023
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Adamas University Assistant Professor2018 - 2023
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Institute of Engineering and Management Assistant Professor2016 - 2017
Education
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University of Calcutta Ph. D.2013 - 2019
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University of Calcutta M. Tech.2008 - 2010
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University of Calcutta M. Sc.2006 - 2008
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University of Calcutta B.Sc. Honours2003 - 2006
Projects & Funding
Projects & funding information is unavailable.
Publications (21)
- Si/Graphene exotic type IMPATT (p+-n-n+-) Opto-sensor: First experimental observation Save
- Strain engineering in Coupled Quantum Dot (CQD) system Save
- Power-enhancement mode high electron mobility avalanche transit time (HEMATT) oscillators at THz region: a study on electro-optical characteristics Save
- Role of two-dimensional electron gas (2DEG) in GaN/AlGaN avalanche transit time (ATT) oscillator for RF performance boosting: application in THz opto-electronics Save
- Electrical Characterization in Ultra-Wide Band Gap III-Nitride Heterostructure IMPATT/HEMATT Diodes: A Room-Temperature Sub-Millimeter Wave Power Source Save
- Gap-opening in Graphene by Substrate-induced Strain-engineering Coupled with Magnetic Spin-engineering Save
- High electron mobility effect in band-engineered GaN/quasi-AlGaN based exotic avalanche transit time diode arrays: application as ultra fast THz switches Save
- Band-engineered quasi-AlGaN/GaN high-electron-mobility-avalanche-transit-time (HEMATT) oscillator: electro-optical interaction study in sub-mm frequency domain Save
- Opening of Bandgap in Graphene: A Complete Overview to Unexplored Aspects Save
- Strained Si/Si1−yCy superlattice based quasi-read avalanche transit-time devices for terahertz ultrafast switches Save