Pankaj Pathak

About

Pankaj Pathak received B.Sc. Physics and M.Sc. Physics specialization in electronics, all from Rohilkhand University, India in 1992 and 1994 respectively. He received his Ph.D. degree in electronic Science from University of Delhi in 2000. He also completed a postgraduate level course (M. Tech. - Computer Science) from Institution of Electronics & Telecommunication Engineers, Delhi.
He is currently Director (R&D) with Nanotrics Innovations Pvt. Ltd., India and Adjunct Professor in school of engineering and technology, Sharda University. He joined department of electronic science, University of Delhi as Research Scholar/Lecturer from 1996 to 2000. He has 15 years of electronics & IT research and product development experience with leading organizations. He was listed in the Who’s Who in the World in 2011. He is life corporate member of Institution of Electronics & Telecommunication Engineers and member of Semiconductor Society of India. His research interests include semiconductor/microwave communication devices, wireless & multimedia communication systems, embedded & VLSI system design.

Employment

• GL Bajaj Institute of Technology and Management GM (Research & Entrepreneurship )
  2018 - Present
• Sharda University Adjunct Professor
  2014 - Present

Education

• University of Delhi Ph.D.
  ? - 2000
• Institution of Electronics and Telecommunication Engineers ALCCS (M.Tech. equivqlent)
  ? - 1999

Projects & Funding

Projects & funding information is unavailable.

Publications (22)

• A Review on FPGA-Based Digital Filters for De-Noising ECG Signal
  2020 DOI: 10.4018/978-1-7998-4381-8.ch001
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• Small-signal parameter extraction of asymmetric DCDMG AlGaN/GaN HEMT
  COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 2018 DOI: 10.1108/COMPEL-02-2017-0074
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• 'Small Signal Parameter Extraction and DC Simulation of Asymmetric Dual Channel AlGaN/GaN Heterojunction Field Effect Transistor
  Indian Journal of Science and Technology 2017
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• Noise modeling and simulation of DCDMG AlGaN/GaN MODFET
  International Journal of Applied Engineering Research 2017
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• TCAD simulations and small signal modeling of DMG AlGaN/GaN HFET
  International Journal of Electrical and Computer Engineering 2017 DOI: 10.11591/ijece.v7i4.pp1839-1849
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• Does 5G offer enough opportunities in IoT for spectrum investments worldwide ?
  Telecomlead.com 2015 DOI: DOI: 10.13140/RG.2.1.5192.1766
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• Latest Buzzword! “Enterprise Mobility”
  Infotechlead.com 2015 DOI: DOI: 10.13140/RG.2.1.4155.7609
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• Analytical DC Model of Double Channel Dual Material Gate AlmGa1-mN/GaN High Electron Mobility Transistor, Ultra High Speed Device for Microwave and Radar Applications
  American International Journal of Research in Science, Technology, Engineering & Mathematics 2015
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• Current Voltage and Trans conductance 2 - D Model for Dual Material Gate Al m Ga 1 - m N / GaN Modulation Doped Field Effect Transistor for High F requency Microwave Circuit Applications
  International Journal of Engineering Technology, Management and Applied Sciences 2015
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• I-V Characteristics and Transconductance Modeling for Dual Channel AlGaN/GaN MODFETs
  International Journal of Research in Engineering and Technology: IJRET 2015 DOI: 10.15623/IJRET.2015.0406073
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