Dr. Subhrajit Mukherjee

About

I am an Assistant Professor in the Department of Physics, School of Natural Sciences, at Shiv Nadar Institution of Eminence (SNIoE), Delhi-NCR, India. Previously, I served as a Scientist at Q.InC. and IMRE, A*STAR, Singapore; Aly-Kauffmann Postdoctoral Fellow at Technion–Israel Institute of Technology; and a Project Scientist in the Department of Physics at IIT Kharagpur.

I have been extensively working on the development of 2D material based solid-state quantum dots to realize spin-valley qubits. My research integrates cutting-edge semiconductor technology and quantum devices, with a strong focus on micro- and nanoscale fabrication. My interests lie in the physics of semiconductor devices, reflected in numerous publications in high-impact academic journals, U.S. patents, and presentations at international conferences. Driven by fundamental curiosity, my work holds immense potential for future technological applications, including advancements in optically controlled integrated memory devices, synaptic devices, room-temperature lasing and quantum device engineering.

Employment

• Shiv Nadar University Assistant Professor
  2025 - Present
• Agency for Science, Technology and Research Scientist
  2023 - 2025
• Technion – Israel Institute of Technology Postdoc
  2019 - 2023
• Indian Institute of Technology Kharagpur Scientist
  2018 - 2019

Education

• Indian Institute of Technology Kharagpur Ph. D.
  2013 - 2018
• Indian Institute of Technology Kharagpur M.Tech.
  2011 - 2013
• Banaras Hindu University M.Sc.
  2009 - 2011
• University of Calcutta B.Sc.
  2006 - 2009

Projects & Funding

Projects & funding information is unavailable.

Publications (70)

• Toward Phonon-Limited Transport in Two-Dimensional Transition Metal Dichalcogenides by Oxygen-Free Fabrication
  ACS Nano 2025 DOI: 10.1021/acsnano.5c00995
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• Liquid Metal Oxide-Assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics
  ACS Nano 2024 DOI: 10.1021/acsnano.4c08554
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• Nanoironing van der Waals Heterostructures toward Electrically Controlled Quantum Dots
  ACS Applied Materials & Interfaces 2024 DOI: 10.1021/acsami.4c03639
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• Graphene-In2Se3 van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation
  ACS Nano 2023 DOI: 10.1021/acsnano.3c03820
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• Valley-addressable monolayer lasing through spin-controlled Berry phase photonic cavities
  Science 2023 DOI: 10.1126/science.adi7196
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• Edge-Based Two-Dimensional α-In2Se3–MoS2 Ferroelectric Field Effect Device
  ACS Applied Materials & Interfaces 2023 DOI: 10.1021/acsami.3c00590
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• Non-Volatile Reconfigurable p-n Junction Utilizing In-Plane Ferroelectricity in 2D WSe2/α-In2Se3 Asymmetric Heterostructures
  Advanced Functional Materials 2023 DOI: 10.1002/ADFM.202306682
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• One-pot liquid-phase synthesis of MoS2-WS2 van der waals heterostructures for broadband photodetection
  Nanotechnology 2023 DOI: 10.1088/1361-6528/ACAB6E
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• Spin-valley Rashba monolayer laser
  Nature Materials 2023 DOI: 10.1038/S41563-023-01603-3
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• Bright excitonic multiplexing mediated by dark exciton transition in two-dimensional TMDCs at room temperature
  Materials Horizons 2022 DOI: 10.1039/D1MH01186C
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