Samishta Choudhary

About

I am a passionate researcher and a quick learner. My sound knowledge of diverse technologies enables me to think and act in a broader area. My Ph.D. research deals with a rigorous growth optimization of SK and SML self-assembled QDs to manifest a uniform size and strain distribution i.e. heterogeneous coupling. The morphological, electronic, and optical properties of the QDs show how the energy of confined (bound) levels for carriers can be fine-tuned in the windows of optoelectronic and photonic interest i.e. 1.3 μm (C band) and beyond. By this novel architecture, several carrier dynamics related to the performance parameters of QDIPs and QDSCs can also be understood. I have fabricated 1-2 um size devices using optical lithography.
I have expertise in handling tools like FEI-Tecnai G2 F30 HR-Transmission electron microscopy-300KV, Themis-300KV, Operated Ultrasonic cutter, Disc cutter, Dimple grinder, Percussion Ion Polishing System (PIPS), FIB-Lamella preparation, AnnealSys Rapid thermal annealing, Photo-luminescence, Laurel spin coater, EVG620 Double -side Mask Aligner, Dektak & Ambios XP-1 stylus profiler, E-beam, and thermal evaporator.
Nowadays, I am more inclined to develop semiconducting devices for high-power and high-frequency applications, quantum optical and quantum photonics, and machine learning.

Employment

• International Iberian Nanotechnology Laboratory Postdoctoral Researcher
  2025 - Present
• Indian Institute of Technology Bombay Institute Postdoctoral Fellow
  2023 - 2024

Education

• Indian Institute of Technology Bombay Doctrate
  2019 - 2023
• University of Rajasthan Bachelor of Science in Physics with Honours

Projects & Funding

Projects & funding information is unavailable.

Publications (15)

• A theoretical study on strain and optical property of InAs SK quantum dot with varying capping in SK-SML coupled surface quantum dot heterostructure
  Low-Dimensional Materials and Devices 2023 2023
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• Impact of Bi doping on the structural and optical properties of the lead-free double perovskites (Cs2SnCl6: Bi3+) for optoelectronic applications
  Organic and Hybrid Light Emitting Materials and Devices XXVII 2023
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• Reduced graphene oxide (rGO)-CsSnI3 nanocomposites: a cost-effective technique to improve the structural and optical properties for optoelectronic device applications
  Organic, Hybrid, and Perovskite Photovoltaics XXIV 2023
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• Theoretical study on vertically coupled Stranski-Krastanov (SK) on Sub Monolayer (SML) InAs quantum dot heterostructures employing ternary and quaternary barrier materials
  IEEE Transactions on Nanotechnology 2023
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• A comparative study of single layer InAs SK, SML, and coupled SK-on-SML QDs heterostructure by incorporating InGaAsSb (Type-II) as capping layer
  Physics and Simulation of Optoelectronic Devices XXX 2022
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• A systematic post-growth thermal annealing step for receding size inhomogeneity inside multiple InAs/Inx (Ga) 1-xAs sub-monolayer quantum-dot heterostructures
  Photonic and Phononic Properties of Engineered Nanostructures XII 2022
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• High energy proton implantation effect on the emission wavelength and strain phenomenon of strain coupled InAs/In (Ga) As submonolayer (SML) QDs and Stranski-Krastanov (SK) QDs
  Photonic and Phononic Properties of Engineered Nanostructures XII 2022
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• Hybrid stranski-krastanov/submonolayer quantum dot heterostructure with type-II band alignment: an efficient way of near infrared photovoltaic energy conversion
  Journal of Luminescence 2021
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• Effect of variation in Sb composition in In0. 18Ga0. 82AsYSb1-Y capping layer on InAs Stranski-Krastanov (SK) QDs in strain coupled Stranski-Krastanov (SK) on submonolayer (SML) QDs heterostructures
  Low-Dimensional Materials and Devices 2021 2021
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• The electronic interaction between vertically coupled Stranski-Krastanov and submonolayer quantum dots: a detailed investigation of carrier transitions and correlation with improved NIR energy conversion efficiency
  Physics, Simulation, and Photonic Engineering of Photovoltaic Devices X 2021
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