ARIGHNA BASAK

Employment

• Brainware University Assistant Professor
  2017 - Present

Education

• Jadavpur University
  2015 - 2017

Projects & Funding

Projects & funding information is unavailable.

Publications (14)

• Impact of underlap layer on DC and RF/analog performance of asymmetric junctionless dual material double gate MOSFET for low-power analog amplifier design
  Physica Scripta 2024 DOI: 10.1088/1402-4896/ad69d8
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• Analytical Modeling of Asymmetric Junctionless Dual Material Double Gate MOSFET with Underlap for Enhanced Hot Carrier Reliability
  2023 IEEE Devices for Integrated Circuit (DevIC) 2023 DOI: 10.1109/devic57758.2023.10134835
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• Application of Nanomaterial-Based Biosensors for Healthcare Diagnostics
  Smart Innovation, Systems and Technologies 2023 DOI: 10.1007/978-981-19-7107-5_6
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• Application of nanoscale devices in circuits
  Nanoelectronics: Physics, Materials and Devices 2023 DOI: 10.1016/B978-0-323-91832-9.00017-8
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• Emerging non-CMOS devices and technologies
  Nanoelectronics: Physics, Materials and Devices 2023 DOI: 10.1016/B978-0-323-91832-9.00014-2
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• Analytical Modeling of Asymmetric Gate Stack Junctionless Dual Material Surrounding Gate MOSFET for Enhanced Hot Carrier Reliability
  Proceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022 2022 DOI: 10.1109/EDKCON56221.2022.10032874
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• Drain Current Modelling of Asymmetric Junctionless Dual Material Double Gate MOSFET with High K Gate Stack for Analog and RF Performance
  Silicon 2022 DOI: 10.1007/s12633-020-00783-w
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• Impact of Negative Bottom Gate Voltage for Improvement of RF/Analog Performance in Asymmetric Junctionless Dual Material Double Gate MOSFET
  Lecture Notes in Electrical Engineering 2022 DOI: 10.1007/978-981-19-6301-8_12
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• Protection, restoration, and improvement
  Optical Switching: Device Technology and Applications in Networks 2022 DOI: 10.1002/9781119819264.ch16
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• Drain current modelling of unipolar junction dual material double-gate MOSFET (UJDMDG) for SoC applications
  Microsystem Technologies 2021 DOI: 10.1007/s00542-019-04691-x
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