DR. SWETA RANI
Sister Nivedita University, Tata Consultancy Services, Indian Institute of Technology Dhanbad, Lovely Professional University
About
Ph.D. in Electronics Engineering specializing in Nanotechnology and VLSI, with research expertise in quantum dots, nanophotonics, and optoelectronic devices. Over 3 years of academic experience as an Assistant Professor and prior industry experience as an Assistant System Engineer at Tata Consultancy Services. Published researcher with journal articles in IEEE Transactions on Nanotechnology, Journal of Applied Physics, and Journal of Nanophotonics. Skilled in simulation, modeling, electronic device analysis, programming, and interdisciplinary collaboration.
Employment
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Sister Nivedita University Assistant Professor2023 - Present
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Tata Consultancy Services Assistant System Engineer2014 - 2015
Education
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Indian Institute of Technology Dhanbad Ph.D2017 - 2023
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Indian Institute of Technology Dhanbad M.TECH2015 - 2017
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Lovely Professional University B.TECH2010 - 2014
Projects & Funding
Projects & funding information is unavailable.
Publications (13)
- Quantitative Modeling of the Exciton Recombination in Different Structural Compositions of Core-Shell Quantum Dots Save
- Dual Symmetric Bound States in the Continuum on Graphene-based Metasurface Save
- Graphene-based Tunable MD and MQD Enhanced Scattering Plasmonic Metasurface Save
- Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies Save
- Analysis of thermal performance and charge balance in all-inorganic quantum dot light-emitting devices Save
- Effect of Poole-Frenkel emission on electroluminescence in quantum dot light emitting devices with Nickel Oxide layer Save
- Effect of Mg-doped zinc oxide nanoparticles as inorganic electron transport layer in quantum dot light-emitting diodes Save
- Enhancement of fluorescence of single quantum dots by encasing in semiconductor and metal nanoparticles Save
- Understanding the role of the density of traps in quantum dots integrated into light-emitting devices Save
- Dependence of conduction mechanism on bias and temperature in quantum-dot based electroluminescent devices Save