About
Arjun Singh Yadav received the B.Tech degree in Electronics and Communication Engineering from the Government Engineering College Ujjain in 2009, the M.Tech degree in Nanotechnology from Maulana Azad National Institute of Technology Bhopal in 2011, and also awarded the Ph.D.degree from the same institution, in 2017. He is currently with the Department of Electronics and Communication Engineering, National Institute of Technology, Rourkela, where he is working with VLSI and Embedded System Group. His current research interests include memory circuit design, low power circuits, nanoscale devices and Radiation hardened semiconductor devices/ memories for space application. He has published many papers in national and international journals/Conferences.
Employment
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National Institute of Technology Rourkela Assistant Professor
Education
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MANIT Bhopal Ph.D2012 - 2017
Projects & Funding
Projects & funding information is unavailable.
Publications (8)
- A Highly Reliable Dual-Node-Upset-Tolerant 20T Radiation Hardened SRAM Cell for Aerospace Applications Save
- A Highly Efficient SEU Tolerant Radiation Hardening 14T SRAM Cell for Aerospace Applications Save
- Novel PVT Resilient Low-Power Dynamic XOR/XNOR Design Using Variable Threshold MOS for IoT Applications Save
- Novel Four-Stage Comparator with High Speed and Low Kickback Noise Save
- Novel Standby Leakage Reduction Technique in SRAM Cell with Enhanced Read Data Stability by Dynamically Varying the Cell Ratio and Pull-up Ratio using Wordline Save
- Characterization of high speed 9T SRAM cell with enhanced data stability Save
- Low power SRAM cell with reduced write PDP and enhanced noise margin Save
- Low standby leakage 12T SRAM cell characterisation Save