0000-0003-3677-7949 About
Dr. Rahis Kumar Yadav was born in India on 25th Nov,1967. He received PhD degree in Electronics and Communication Engineering from Sharda University, M.Tech degree in Electronics and Communication Engineering from Tezpur Central University and AMIE degree in Electronics and Communication Engineering from "The Institution of Engineers (India)" in 2018, 2007 and 1994 respectively. The Institution of Engineers (India) is a recognized Scientific and Industrial Research Organization by Ministry of Science and Technology, Govt. of India and recipient of Royal Charter 1935. In year 2000, Dr.Yadav also earned Master of Business Administration Degree from Indira Gandhi National Open University, New Delhi, India. Later on he also completed post graduate diploma in embedded system and VLSI design from Center of Advanced Computing (CDAC) and Cadence VLSI Certification Program from Cadence Design System Ltd. He served Indian Air Force as a Senior Technocrat for 20 years and possessing more than 12 years of experience as a an engineering professor in faculty of electronics and communication engineering in highly reputed engineering colleges and universities. He has authored many research articles for peer reviewed international and national journals and presented numerous articles in various international and national conference proceedings. His research interests include modeling and simulation of semiconductor devices, embedded system design and design of VLSI circuits. He is member of IEEE, life fellow of "Institution of Electronics and Telicommunication Engineers ", life corporate member of “The Institution of Engineers (India)” and life member of Indian Society of Technical Education.
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Publications (13)
- Small-signal parameter extraction of asymmetric DCDMG AlGaN/GaN HEMT Save
- Small Signal Parameter Extraction of Asymmetric DCDMG AlGaN/GaN HEMT Save
- Small Signal Parameter Extraction and DCSimulation of Asymmetric Dual Channel AlGaN/GaN Heterojunction Field Effect Transistor Save
- DC and RF performance analysis of dual channel dual material gate AlGaN/GaN MODFET for microwave applications Save
- NOISE PARAMETER EXTRACTION FOR SYMMETRIC DUAL MATERIAL GATE ALGAN/GAN MODFET FOR LNA DESIGN Save
- Noise modeling and simulation of DCDMG AlGaN/GaN MODFET Save
- Noise parameter extraction for symmetric dual material gate AlGaN/GaN MODFET for LNA design Save
- TCAD simulations and small signal modeling of DMG AlGaN/GaN HFET Save
- Analysis and Characterisation of AlGaN-GaN HEMTs for Microwave power applications Save
- Analysis and characterisation of AlGaN-GaN HEMTs for microwave power applications Save