PRAGYA KUSHWAHA

About

Pragya Kushwaha earned her Ph.D. in electrical engineering from the Indian Institute of Technology Kanpur in March 2017. Following her doctoral studies, she worked as lead developer of various BSIM models during her postdoctoral research with the BSIM group at the University of California, Berkeley, CA, USA. From July 2020 to October 2023, she worked as a Scientist SD at the Space Applications Centre, ISRO, Ahmedabad, India where she developed PDK for 250 nm GaN HEMT technology for RF applications and developed methodology for calculating key generation rate for secure quantum communication.
Currently, Dr. Kushwaha is working as DST INSPIRE Faculty cum Senior scientific officer at Indian Institute of Technology Jodhpur, India. Her research interest includes various technologies such as development of single photon avalanche photodiodes for quantum communication and industry-standard compact modeling for CMOS as well as GaN HEMT technologies. She has authored/co-authored more than 60 publications in international journals and conferences. She is a reviewer of the top journals in the field of semiconductor devices including IEEE Transactions on Electron Devices, Journal of Electron devices society, Solid-State Electronics. Dr. Kushwaha is recipient of 2019 IEEE EDS Early Career Award, 2020 Ramanujan Fellowship, and 2019 DST INSPIRE Faculty Fellowship.

Employment

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Education

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Publications (67)

• Impact of BB84 QKD transmitter’s parameter mismatch on secure key generation rate
  Photonic Network Communications 2024 DOI: 10.1007/s11107-023-01010-3
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• Optimization of Source/Drain-epi Region Height in GAA Nanosheet FET for RF Applications
  Device Research Conference - Conference Digest, DRC 2024 DOI: 10.1109/DRC61706.2024.10605576
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• A Broadband and Transient-Accurate AlGaN/GaN HEMT SPICE Model for X-Band RF Applications
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3487959
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• A Width-Scalable SPICE Model of GaN-HEMTs for X-band RF Applications
  7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 2023 DOI: 10.1109/EDTM55494.2023.10102930
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• Characterization and modeling of drain lag using a modified RC network in the ASM-HEMT framework
  Solid-State Electronics 2023 DOI: 10.1016/j.sse.2022.108490
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• A Turnkey Large-Signal Model for Amplifier Design in 5G Spectra using AlGaN/GaN HEMTs
  6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 2022 DOI: 10.1109/EDTM53872.2022.9798335
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• A width-scalable SPICE compact model for GaN HEMTs including self-heating effect
  Device Research Conference - Conference Digest, DRC 2022 DOI: 10.1109/DRC55272.2022.9855814
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• Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3204523
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• Impact of BB84 QKD Transmitter's Wavelength Mismatch on Secure Key Generation Rate
  International Symposium on Advanced Networks and Telecommunication Systems, ANTS 2022 DOI: 10.1109/ANTS56424.2022.10227726
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• Characterization of GaN HEMT at Cryogenic Temperatures
  2021 IEEE MTT-S International Microwave and RF Conference, IMARC 2021 2021 DOI: 10.1109/IMaRC49196.2021.9714643
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