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Publications (4)
- Performance improvement in AlGaN/GaN high electron mobility transistors by low‐temperature ICP‐CVD SiN x as gate dielectric and surface passivation Save
- Realization of high quality silicon nitride deposition at low temperatures Save
- Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO2 as a Dielectric Save
- Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs Save