V. J. B. Torres
Also known as: V. T. B. Torres
University of Aveiro, King's College London, University of Coimbra
Research areas: Engineering · Electrical and Electronic Engineering · Semiconductor materials and interfaces · Silicon and Solar Cell Technologies · Semiconductor materials and devices
0000-0003-3795-6818
About
Born in 11/05/1956 in Elvas, Portugal
Secondary school in Faro, 1973, Portugal.
Graduation on Physics, University of Coimbra, 1978
Ph. D. in Physics, King's College London, 1990
Professor, University of Aveiro, 2005
Chairmen of Physics Department, University of Aveiro, 1992-1994
Scientific Coordinator of PhysicsDepartment, University of Aveiro, 1999-2001
Employment
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University of Aveiro Professor2005 - Present
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University of Aveiro Associate Lecturer1994 - 2005
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University of Aveiro Lecturer1991 - 1994
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University of Aveiro Assistente1984 - 1991
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University of Aveiro Assistente Estagiário (trainee)1979 - 1984
Education
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King's College London D. Ph.1983 - 1990
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University of Aveiro Agregação? - 1999
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University of Coimbra Licenciatura? - 1978
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University of Coimbra B. Sc.? - 1976
Projects & Funding
Projects & funding information is unavailable.
Publications (95)
- Festivais gastronómicos de enguias em Portugal: Nostalgia, identidade e património alimentar Save
- Phonon-polaritons in Zn1− xMgxTe (x≤ 0.09): A Raman scattering study Save
- Vibrational-mechanical properties of the highly-mismatched Cd1-xBexTe semiconductor alloy: experiment and ab initio calculations Save
- Theory of reactions between hydrogen and group-III acceptors in silicon Save
- Erratum: “Raman study of Cd1−xZnxTe phonons and phonon-polaritons – Experiment and ab initio calculations” [J. Appl. Phys. 133, 065701 (2023)] Save
- Raman study of Cd1−xZnxTe phonons and phonon–polaritons—Experiment and ab initio calculations Save
- Theory of shallow and deep boron defects in 4H -SiC Save
- Exceptional phonon point versus free phonon coupling in Zn1-xBexTe under pressure: an experimental and ab initio Raman study Save
- Exceptional phonon point versus free phonon coupling in Zn1−xBexTe under pressure: an experimental and ab initio Raman study Save
- Silicon carbide diodes for neutron detection Save
- Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition Save
- Engineering Silicon Carbide for Enhanced Borders and Ports Security Save
- Engineering Silicon carbide for Enhanced Borders and Ports Security Save
- Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition Save
- Multi-phonon (percolation) behavior and local clustering of CdxZn1−xSe-cubic mixed crystals (x ≤ 0.3): A Raman–ab initio study Save
- Deep level defects in 4H-SiC epitaxial layers Save
- Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study Save
- A first-principles model of copper-boron interactions in Si: Implications for the light-induced degradation of solar Si Save
- Clustering/anticlustering effects on the GeSi Raman spectra at moderate (Ge,Si) contents: Percolation scheme vs. ab initio calculations Save
- Theory of the carbon vacancy in 4H -SiC: Crystal field and pseudo-Jahn-Teller effects Save