Shengke Zhang

Employment

• Efficient Power Conversion Corporation VP of Product Reliability
  2017 - Present
• Wispry Inc Sr. Failure Analysis Engineer
  2016 - 2017
• Arizona State University Research Associate
  2012 - 2016

Education

• Arizona State University Ph.D.
  2012 - 2016

Projects & Funding

Projects & funding information is unavailable.

Publications (15)

• A Comprehensive Lifetime Model for Schottky-Type pGaN Gate of GaN HEMTs
  IEEE Electron Device Letters 2025 DOI: 10.1109/LED.2024.3516086
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• Main Mechanism Responsible for pGaN Gate Breakdown and Lifetime Projection in GaN HEMTs
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3442774
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• Proposing a Duty Cycle Based Repetitive Drain Overvoltage Specification for GaN HEMTs
  IEEE Power Electronics Magazine 2024 DOI: 10.1109/MPEL.2024.3354648
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• Projecting GaN HEMTs lifetimes under typical stresses commonly observed in DC-DC converters
  Power Electronic Devices and Components 2023 DOI: 10.1016/j.pedc.2023.100051
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• Using Test-to-Fail Methodology to Predict How GaN Devices Can Last More than 25 Years in Solar Applications
  VDE VERLAG GMBH 2023 DOI: 10.30420/566131030
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• In-situ R DS(on) Characterization and Lifetime Projection of GaN HEMTs Under Repetitive Overvoltage Switching
  IEEE Transactions on Power Electronics 2023 DOI: 10.1109/TPEL.2023.3290117
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• Radiation Results for Modern GaN-on-Si Power Transistors
  2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) 2022 DOI: 10.1109/redw56037.2022.9921699
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• Understanding Dynamic RDS(on) in GaN Devices
  ECS Meeting Abstracts 2021 DOI: 10.1149/ma2021-02341002mtgabs
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• Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures
  AIP Advances 2021 DOI: 10.1063/5.0041525
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• Intrinsic Failure Mechanisms in GaN-on-Si Power Transistors
  IEEE Power Electronics Magazine 2020 DOI: 10.1109/mpel.2020.3033651
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