KD

dasarikiran

University of Illinois System, University of Puerto Rico in Rio Piedras, Indian Institute of Science

ORCID iD 0000-0003-3918-5471

About

At present, I am working as a Postdoctoral Research Associate at Electrical and Computer Engineering Department, the University of Illinois at Urbana-Champaign, IL, USA. Fabrication and characterization of GaN-based Schottky Barrier Diodes using molecular beam epitaxy is one of the main challenges.

I did my Ph.D. in chemical physics from the University of Puerto Rico, San Juan, USA. My Ph.D. thesis deals with the fabrication of pure and Rare-Earth doped III-N alloy nanomaterial using MBE for the spintronic and optoelectronic applications. Yb- and Er-doped GaN and InGaN nanostructures were studied and Yb-doped InGaN nanostructures have been demonstrated for the above room temperature ferromagnetism and visible emission. Before joining UPR, I worked as a project assistant on the synthesize of vertically aligned carbon nanotubes using tubular furnace chemical vapor deposition at Indian Institute of Sciences, Bangalore, India. I did my Masters in Nanotechnology from VIT University, Vellore, India and M.Sc. in Physics from Vikram University, Ujjain, India.

Employment

  • University of Illinois System Postdoctoral Research Associate
    2017 - Present
  • University of Puerto Rico in Rio Piedras Postdoc
    2017 - 2017
  • Indian Institute of Science Project Assistant
    2008 - 2009

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (20)