RAMESH CHODIPILLI

Employment

• National Physical Laboratory CSIR

Education

• National Physical Laboratory CSIR Senior research scholar
  2017 - Present

Projects & Funding

Projects & funding information is unavailable.

Publications (16)

• Structural and ultraviolet photo-detection properties of laser molecular beam epitaxy grown GaN layers using solid GaN and liquid Ga targets
  Physica Scripta 2021 DOI: 10.1088/1402-4896/abfcef
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• Self-induced growth of GaN nanorod assembly on flexible niobium metal foil using laser molecular beam epitaxy
  Vacuum 2020 DOI: 10.1016/j.vacuum.2020.109643
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• AlGaN nanowall network structure grown on sapphire (0001) substrate by laser molecular beam epitaxy
  Materials Science in Semiconductor Processing 2019 DOI: 10.1016/j.mssp.2018.09.011
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• Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting
  Journal of Alloys and Compounds 2019 DOI: 10.1016/j.jallcom.2019.07.071
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• Field-emission and photo-detection characteristics of laser molecular beam epitaxy grown homoepitaxial GaN nanowall networks
  Materials Science in Semiconductor Processing 2019 DOI: 10.1016/j.mssp.2019.03.015
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• Influence of surface nitridation and an aln buffer layer on the growth of gan nanostructures on a flexible ti metal foil using laser molecular beam epitaxy
  Japanese Journal of Applied Physics 2019 DOI: 10.7567/1347-4065/ab0f17
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• Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors
  Journal of Alloys and Compounds 2019 DOI: 10.1016/j.jallcom.2018.08.149
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• Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy
  Journal of Crystal Growth 2019 DOI: 10.1016/j.jcrysgro.2018.12.022
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• Structural and optical properties of low temperature grown single crystalline GaN nanorods on flexible tungsten foil using laser molecular beam epitaxy
  Materials Research Express 2019 DOI: 10.1088/2053-1591/ab2966
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• Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of Al<inf>x</inf>Ga<inf>1−x</inf>N epitaxial layers on sapphire (0001)
  Journal of Alloys and Compounds 2018 DOI: 10.1016/j.jallcom.2017.12.220
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