Dr.Santashraya Prasad

Employment

• Birla Institute of Technology, Mesra Asssistant Professor
  2008 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (16)

• Study and Analysis of AlGaN/GaN-Based HEMT and MOSHEMT
  International Conference on Energy Systems, Drives and Automations 2023 DOI: https://doi.org/10.1007/978-981-99-3691-5_20
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• Influence of AlN Spacer Layer on SiN-Passivated AlGaN/GaN HEMT
  2023 DOI: 10.1007/978-981-99-0412-9_20
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• Comparative analysis and robustness study of logic styles
  Microsystem Technologies 2022 DOI: https://doi.org/10.1007/s00542-022-05378-6
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• Y-shaped double-gate high electron mobility transistor for radio frequency applications
  Int. J. Nanoparticles 2022 DOI: https://doi.org/10.1504/IJNP.2022.126356
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• Characterization of AllnN/GaN Based HEMT for Radio-frequency Applications
  Micro and Nanosystems 2022 DOI: DOI: 10.2174/1876402914666220510112625
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• Radiation-Hardened Low Read Delay 12T-SRAM Cell for Space Applications
  2021 Devices for Integrated Circuit (DevIC) 2021 DOI: DOI:10.1109/DevIC50843.2021.9455796
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• A Study on Power Optimization Techniques in PSoC
  International Conference on Communication and Signal Processing 2019 DOI: 10.1109/ICCSP.2019.8698070
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• High breakdown (958 V) low threshold GaN HEMT
  2017 International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT), Aligarh 2017 DOI: 10.1109/MSPCT.2017.8363981
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• Process and Voltage Variation-Aware Design and Analysis of Active Grounded Inductor-Based Bandpass Filter
  Progress in Intelligent Computing Techniques: Theory, Practice, and Applications 2017 DOI: 10.1007/978-981-10-3373-5_31
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• Analysis of breakdown voltage of a field plated High Electron Mobility Transistor
  2017 Devices for Integrated Circuit (DevIC) 2017 DOI: 10.1109/DEVIC.2017.8073929
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