Ankush Bag

Employment

• Indian Institute of Technology Guwahati Assistant Professor
  2021 - Present
• Indian Institute of Technology Mandi
  2016 - 2021

Education

• Indian Institute of Technology Kharagpur PhD
  2012 - 2016
• Jadavpur University Faculty of Engineering and Technology Master of Engineering
  2009 - 2011

Projects & Funding

Projects & funding information is unavailable.

Publications (36)

• Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) heterointerface
  Journal of Alloys and Compounds 2020 DOI: 10.1016/j.jallcom.2019.153052
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• High Responsivity of Quasi-2D Electrospun $\beta$ -Ga2O3-Based Deep-UV Photodetectors
  IEEE Photonics Technology Letters 2019 DOI: 10.1109/lpt.2019.2901236
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• Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis
  Superlattices and Microstructures 2018 DOI: 10.1016/j.spmi.2017.10.033
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• Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique
  Semiconductor Science and Technology 2018 DOI: 10.1088/1361-6641/aaa7cc
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• Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: The role of strain on defect kinetics
  CrystEngComm 2018 DOI: 10.1039/c8ce00577j
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• OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations
  IEEE Transactions on Electron Devices 2018 DOI: 10.1109/TED.2018.2808334
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• Observation and analysis of kink effect during drain current inception of GaN HEMT
  Superlattices and Microstructures 2018 DOI: 10.1016/j.spmi.2018.04.035
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• Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate
  Microelectronics Reliability 2017 DOI: 10.1016/j.microrel.2017.08.016
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• Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K
  IEEE Electron Device Letters 2017 DOI: 10.1109/LED.2017.2647831
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• Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy
  IEEE Transactions on Electron Devices 2017 DOI: 10.1109/TED.2017.2748461
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