Dr. Rohit Kumar
IIT Bombay, The Ohio State University, Indian Institute of Technology Bombay, Jamia Millia Islamia, Indo Korea Science and Technology
0000-0003-4236-2248
About
Dr. Rohit Kumar is currently a Project Scientist in the Electrical Engineering department at the Indian Institute of Technology Bombay, India. He obtained his Bachelor’s degree in Electronics from the University of Delhi, India, in 2015. Subsequently, he received his Master's degree in Electronic Science from the Department of Applied Sciences, Faculty of Engineering & Technology at Jamia Millia Islamia University, New Delhi. Dr. Kumar completed his doctorate in semiconductor device modeling from IIT Bombay, India, in 2025. Prior to starting his Ph.D. at IIT Bombay, he served as a Junior Research Fellow in the Electrical Engineering department at IIT Kanpur. He has interned with the VLSI Lab, SSPL-DRDO, New Delhi, and NISE, Gurugram, Haryana, during his Master's summer project. His current research interests are broadly in the fields of infrared detectors, nanoelectronics, non-equilibrium quantum transport, modeling and atomistic simulations, and novel 2D materials and devices for various applications.
Employment
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IIT Bombay Project Scientist2025 - Present
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The Ohio State University Frontier Visiting Fellow2024 - 2025
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Indo Korea Science and Technology Visiting Research Scholar2023 - 2023
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Indian Institute of Technology Kanpur Junior Research Fellow2019 - 2019
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DRDO Solid State Physics Laboratory Research Intern2017 - 2017
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DRDO Solid State Physics Laboratory Trainee2016 - 2016
Education
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Indian Institute of Technology Bombay Research Scholar2020 - 2025
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Jamia Millia Islamia M.Sc. (Electronics)2015 - 2017
Projects & Funding
Projects & funding information is unavailable.
Publications (10)
- Comprehensive simulation study of CMOS-compatible GeSn nBn photodetectors for e-SWIR technology Save
- Comparative simulation study of Ga-free and Sb-based mid-infrared photodetectors with barrier engineering Save
- Theoretical insights into the thermoelectric performance of 2D MXene Ti3C2 Save
- Comparative analysis of thermoelectric properties in bulk 2H and monolayer MoS2: a first-principles study at high temperatures Save
- Magneto-transport in the monolayer MoS2 material system for high-performance field-effect transistor applications Save
- Design and analytical modeling of high-performance mid-wavelength infrared photodetectors: an nBn architecture Save
- Ultrahigh-performance superlattice mid-infrared nBn photodetectors at high operating temperatures Save
- High-frequency complex impedance analysis of the two-dimensional semiconducting MXene Ti2CO2 Save
- Advancing carrier transport models for InAs/GaSb type-II superlattice mid-wavelength infrared photodetectors Save
- Low-field electron transport study of III-V type-II superlattices Save