SANKALP SINGH

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Publications (24)

• Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing
  Engineering Research Express 2024 0 citations DOI: 10.1088/2631-8695/ad3d32
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• Small-Signal Analysis of Channel Resistance R L at Low Gate Bias Voltages in AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2021 4 citations DOI: 10.1109/TED.2021.3116533
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• An improved parasitic resistance extraction strategy alongside the effect of Cds at low gate bias voltages for AlGaN/GaN HEMTs
  Engineering Research Express 2021 3 citations DOI: 10.1088/2631-8695/abd3e6
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• Impact of Fringing Field on Shell Radius and Spacer Dielectric on Device Performance of InAs-GaSb Core-Shell Nanowire nTFET
  ECS Journal of Solid State Science and Technology 2021 2 citations DOI: 10.1149/2162-8777/ac0549
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• Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs
  Nanoscale Research Letters 2021 25 citations DOI: 10.1186/s11671-021-03615-x
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• Selective area epitaxy of axial wurtzite -InAs nanowire on InGaAs NW by MOCVD
  VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings 2021 0 citations DOI: 10.1109/VLSI-TSA51926.2021.9440134
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• Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD
  Materials Science in Semiconductor Processing 2021 3 citations DOI: 10.1016/j.mssp.2021.106103
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• Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor
  Engineering Research Express 2020 1 citation DOI: 10.1088/2631-8695/aba169
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• Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination
  IEEE Transactions on Nanotechnology 2020 15 citations DOI: 10.1109/TNANO.2020.2992732
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• Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT
  2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 2020 1 citation DOI: 10.1109/SNW50361.2020.9131661
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