SB
Satyanarayan Bhuyan
Indira Gandhi Institute of Technology, Siksha O Anusandhan University, Nanyang Technological University, Indian Institute of Technology Delhi, Institute for Infocomm Research ASTAR Singapore SG
About
Professor/Associate Professor, Department of Physics, Indira Gandhi Institute of Technology, Sarang, Dhenkanal, Odisha India
Employment
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Indira Gandhi Institute of Technology Professor/Associate Professor2026 - Present
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Siksha O Anusandhan University Professor2013 - Present
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Institute for Infocomm Research ASTAR Singapore SG Scientist Grade I2011 - 2013
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National University of Singapore Post Doctoral Research Fellow2010 - 2011
Education
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Nanyang Technological University Ph.D2006 - 2010
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Indian Institute of Technology Delhi Master in Technology2004 - 2006
Projects & Funding
Projects & funding information is unavailable.
Publications (91)
- Structural, morphological, topological, and electrical properties study of oxide-based Fe(Ni2/3Ta1/3)O3 ceramic material for electronic device Save
- Exploration of Fe(Ni2/3V1/3)O3 ceramic electronic material: investigation of morphological-topological, dielectric and capacitive sensing characteristics Save
- Synthesis and electrical characterization of BMN-BFO electronic material system Save
- Dielectric and Conductive Properties of ZnMoO4-TiO2: Exploring High-Temperature Performance and Application Potential Save
- Development of a Capacitive Temperature Sensor Using a Lead-Free Ferroelectric Bi(Fe2/3Ta1/3)O3 Ceramic Save
- Frequency–temperature-dependent electrical properties of fabricated (Pb0.7Bi0.15Sm0.15)(Ti0.7Fe0.3)O3 capacitive electronic material component Save
- Structural, capacitive and resistive characteristics of (Pb0.6Bi0.2Sm0.2)(Fe0.4Ti0.6)O3 Save
- Performance evaluation of material dependency on non-contact stimulation of piezo-actuators Save
- Structural, morphological and capacitive features of [(Pb0.5Bi0.25Y0.25) (Fe0.5Ti0.5)O3] solid state system Save
- Electrical properties of (Pb0.6Gd0.2 Bi0.2)(Fe0.4Ti0.6)O3 material Save