Ravi RANJAN

Employment

• Tyndall National Institute Post Doc Researcher
  2023 - 2026
• NIT Jalandhar Lab Engineer
  2016 - 2018

Education

• NIT Jalandhar PhD
  2018 - 2023
• CDAC MOHALI M.TECH
  2013 - 2015

Projects & Funding

Projects & funding information is unavailable.

Publications (27)

• Investigation of a Dual-Drain Technique on a Nanowire Tunnel Field-Effect Transistor for Bio-sensitivity Enhancement
  Journal of Electronic Materials 2024 DOI: 10.1007/s11664-024-11010-2
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• Design and investigation of extended source F-type nano field effect transistor using non-equilibrium Green's function
  Micro and Nanostructures 2023 DOI: 10.1016/j.micrna.2023.207645
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• Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier
  Micromachines 2023 DOI: 10.3390/mi14071357
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• Design and Analytical Assessment of Non-Ideal Ion-Sensitive β-MIS-(AlGa)2O3/Ga2O3 High Electron Mobility Transistor
  IEEE Nano Technology 2023
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• Differential RVCO with low power, low phase noise and wider tuning range for PLL application
  International Journal of Electronics 2023 DOI: 10.1080/00207217.2022.2164074
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• Design and Analytical Assessment of Non-Ideal Ion-Sensitive β-MIS-(AlGa)2O3/Ga2O3 High Electron Mobility Transistor
  IEEE Transactions on Nanotechnology 2023 DOI: 10.1109/TNANO.2023.3243842
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• Effects of gate width variation on the performance of <scp>Normally‐OFF</scp> dual‐recessed gate <scp>MIS AlGaN</scp> / <scp>GaN HEMT</scp>
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2022 DOI: 10.1002/jnm.2960
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• Design and investigation of field plate-based vertical GAA – β-(AlGa)2O3/Ga2O3 high electron mobility transistor
  Micro and Nanostructures 2022 DOI: 10.1016/j.spmi.2021.107117
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• Overlapped Gate-Source/Drain H-shaped TFET: Proposal, Design and Linearity Analysis
  Silicon 2022 DOI: 10.1007/s12633-021-01404-w
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• Demonstration of Temperature-Dependent Analysis of GAA – β-(AlGa)2O3/Ga2O3 High Electron Mobility Transistor
  IETE Journal of Research 2022 DOI: 10.1080/03772063.2022.2098185
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