Sai Charan Vanjari

Employment

• University of Bristol Research Associate
  2023 - Present

Education

• Indian Institute of Science Bangalore PhD
  2016 - 2023

Projects & Funding

Projects & funding information is unavailable.

Publications (19)

• Double drift layers to minimize on-resistance in 2.7-kV β-Ga2O3 (001) vertical trench Schottky barrier diodes
  Applied Physics Letters 2026 DOI: 10.1063/5.0307807
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• Microanalysis of β-(AlxGa1−x)2O3 Films Grown by MOCVD
  Materials 2026 DOI: 10.3390/ma19040672
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• Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β-Ga2O3 (001) Trench Schottky Barrier Diodes Using H3PO4 Treatment
  ACS Applied Electronic Materials 2026 DOI: 10.1021/acsaelm.5c02537
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• Microwave Power Performance of Buffer-Free AlGaN/GaN MISHEMT With MOCVD Grown Ex Situ SiN
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3554160
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• Low On-Resistance and High Carrier Mobility in β-Ga2O3 Single-Crystal Substrates through Tantalum Doping
  ACS Applied Electronic Materials 2025 DOI: 10.1021/acsaelm.4c01857
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• Electrically active defects in Ta-doped β-Ga2O3 grown using the optical floating zone method
  APL Materials 2025 DOI: 10.1063/5.0261495
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• Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications
  ACS Applied Electronic Materials 2025 DOI: 10.1021/acsaelm.5c00119
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• Breakdown-induced directional cracking in kilovolt-class β -Ga2O3 (001) vertical trench Schottky barrier diodes
  Applied Physics Letters 2025 DOI: 10.1063/5.0260734
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• Characterization of deep-level defects in OFZ grown Nb-doped β-Ga2O3 single crystals
  APL Materials 2025 DOI: 10.1063/5.0261436
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• Degradation of on-current in 4 kV β-Ga2O3 trench Schottky barrier diodes under high voltage step stressing
  Applied Physics Letters 2025 DOI: 10.1063/5.0278110
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