R S Ajimsha

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Publications (43)

• Disorder driven weak localization and phase coherent electron transport in Ga doped (Zn:V)O thin films
  ECS Journal of Solid State Science and Technology 2019 DOI: 10.1149/2.0171903jss
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• Studies on transient characteristics of unipolar resistive switching processes in TiO<inf>2</inf> thin film grown by atomic layer deposition
  Journal of Physics D: Applied Physics 2018 DOI: 10.1088/1361-6463/aabc84
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• Epitaxial growth and band alignment properties of NiO/GaN heterojunction for light emitting diode applications
  Applied Physics Letters 2017 DOI: 10.1063/1.4983200
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• Observation of weak localization and phase coherent electron transport in sparsely doped (Zn:Ga)O thin films
  Journal of Alloys and Compounds 2017 DOI: 10.1016/j.jallcom.2017.02.263
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• Quantized conductance in Ta<inf>2</inf>O<inf>5</inf> based resistive random access memory devices
  AIP Conference Proceedings 2017 DOI: 10.1063/1.4980711
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• Studies on resistive switching times in NiO thin films grown by pulsed laser deposition
  Journal of Physics D: Applied Physics 2017 DOI: 10.1088/1361-6463/aa83ce
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• Studies on structural and optical properties of pulsed laser deposited NiO thin films under varying deposition parameters
  Materials Science in Semiconductor Processing 2017 DOI: 10.1016/j.mssp.2017.04.025
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• Electron interference effects and strong localization in Cu doped ZnO thin films
  Materials Science in Semiconductor Processing 2017 DOI: 10.1016/j.mssp.2017.06.024
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• Determination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applications
  Applied Surface Science 2016 DOI: 10.1016/j.apsusc.2016.07.147
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• Effect of growth temperature on diode parameters of n-ZnO/p-Si heterojuction diodes grown by atomic layer deposition
  Materials Science in Semiconductor Processing 2016 DOI: 10.1016/j.mssp.2016.06.006
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