Mohit D. Ganeriwala

About

I am an Assistant Professor in the department of Electrical Engineering at Indian Institute of Technology Kanpur, with interest in multi-scale modeling and simulations, including atomistic simulations, numerical modeling and device level simulations, compact model development and electrical characterization.

Before that I was a Marie Skłodowska-Curie Actions (MSCA) postdoctoral researcher at the Department of Electronics and Computer Technology at the University of Granada.

I received my BTech (2012) (Gold medal for academic excellence) in Electronics and Communications from Nirma University India, MTech (2015) (Gold medal for academic excellence and Best research award) and PhD (2020) in Electrical Engineering from the Indian Institute of Technology (IIT) Gandhinagar, India

From May 2020 to Jan 2022 I worked as a principal engineer, Compact modeling and characterization at GlobalFoundries. I was also a visiting researcher at different National and international institutions including ISRO, India (2012), IIT Kanpur (2015) and JAIST, Japan (2016). And has authored several scientific contributions in various peer-reviewed Journals and International conference proceedings, being an active reviewer of articles from international journals and conferences. I have received several grants and fellowships such as MSCA-IF, European Commission (2021), Visvesvaraya PhD Fellowship, MeitY, Government of India (2015), JASSO Internship Grant, Japan (2016).

Employment

• Indian Institute of Technology Kanpur Assistant Professor
  2025 - Present

Education

• Indian Institute of Technology Gandhinagar PhD
  2015 - 2020
• Indian Institute of Technology Gandhinagar MTech
  2013 - 2015

Projects & Funding

Projects & funding information is unavailable.

Publications (35)

• Accurate computation of numerical drift-diffusion fluxes in arbitrarily degenerate gases
  Computer Physics Communications 2026 DOI: 10.1016/j.cpc.2026.110123
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• Understanding Memristive Behavior: An Atomistic Study of the Influence of Grain Boundaries on Surface and Out-of-Plane Diffusion of Metallic Atoms
  Arxiv 2025 DOI: 10.48550/arXiv.2501.00904
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• Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
  Arxiv 2025 DOI: 10.48550/arXiv.2504.07979
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• Numerical study of synaptic behavior in amorphous HfO2-based ferroelectric-like FETs generated by voltage-driven ion migration
  Arxiv 2025 DOI: 10.48550/arXiv.2502.17101
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• Effect of grain boundaries on metal atom migration and electronic transport in 2D TMD-based resistive switches
  Nanoscale 2025 DOI: 10.1039/D4NR05321D
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• A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors
  IEEE Journal of the Electron Devices Society 2025 DOI: 10.1109/JEDS.2025.3540094
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• Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications
  Small Science 2025 DOI: 10.1002/smsc.202570023
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• Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications
  Small Science 2025 DOI: 10.1002/smsc.202400523
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• Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
  Nano Letters 2025 DOI: 10.1021/acs.nanolett.5c01992
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• 1/f noise model for extracting bulk trap density in scaled metal oxide semiconductor field effect transistors
  Journal of Applied Physics 2025 DOI: 10.1063/5.0299430
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