RC
Rajarshi Chakraborty
Bergische Universität Wuppertal, Indian Institute of Technology (BHU) Varanasi
0000-0003-4927-3168
About
Metal Oxide Thin Film Transistors, Memory Devices , Neuromorphic Devices, Sensors, Photodetectors, Quantum Dots, THz detection
Employment
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Bergische Universität Wuppertal Post-Doctoral Researcher2026 - Present
Education
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Indian Institute of Technology (BHU) Varanasi PhD2020 - 2025
Projects & Funding
Projects & funding information is unavailable.
Publications (24)
- Oxide Memristor of Ag/Ag+ Doped V2O5 and SnO2 Bilayer Thin Film for Energy Efficient Memory, Logic and Neuromorphic Device Application Save
- Low Operating Voltage Metal‐Oxide Thin‐Film Transistor for Portable Physiological Temperature Sensing Save
- Solution-processed metal oxide synaptic transistor with bilayer Li-ion-conducting gate dielectric Save
- Optoelectronic Neuromorphic Transistors Using ZnO Quantum Dots and Multilayer Ionic Gate Dielectrics Save
- Emulating synaptic plasticity in a solution processed Ag-metalized oxide memristor for high-accuracy neuromorphic computing Save
- Optically/electrically controlled Ag+ metallization in solution-processed oxide memtransistors for neuromorphic computing Save
- Fabrication of flexible memristors using PMMA-rGO/Au nanocomposite thin films with improved stability and retention time Save
- High‐Performance Broadband Photodetector with Lateral Contact of n+‐Si Wafer by Two Asymmetric Work‐Function Electrodes Save
- SOLUTION PROCESSED PLASMONIC OPTOELECTRONIC MEMRISTOR Save
- Piezopotential Gated Self-Biased Conducting Polymer-Based Flexible Transistor for Mechanical Energy Harvesting Device Save