Dr. Ravinder Kumar

Employment

• National Forensic Sciences University Assistant Professor
  2024 - Present
• Indian Institute of Technology Bombay Research Scholar
  2016 - 2022

Education

• Panjab University M.Tech. (Microelectronics)
  2009 - 2011
• Chaudhary Devi Lal University Master of Science (Physics)
  2006 - 2008
• Government National PG College Bachelor of Science
  2000 - 2003

Projects & Funding

Projects & funding information is unavailable.

Publications (21)

• InAs quantum dot-in-a-well heterostructures with InGaAs, GaAsN and GaAsSb well using digital alloy capping layer
  Current Applied Physics 2023 DOI: 10.1016/j.cap.2022.12.012
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• Short-wave infrared (SWIR) photodetection by InAs/GaAs quantum dot heterostructures grown on Ge (100) substrate without Migration Enhanced Epitaxy layer
  Superlattices and Microstructures 2020 DOI: 10.1016/j.spmi.2020.106714
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• Submonolayer quantum dots in P-i-P configuration: Study on effects of monolayer coverage and stacking variations
  Proceedings of SPIE - The International Society for Optical Engineering 2020 DOI: 10.1117/12.2542569
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• Optimization of vertical strain coupling in InAs/GaAs p-i-p quantum dot infrared photodetectors with applied growth strategy
  Journal of Luminescence 2020 DOI: 10.1016/j.jlumin.2020.117499
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• Optimization of strain-coupled InAs QD layers in P-i-P infrared photodetector heterostructures
  Proceedings of SPIE - The International Society for Optical Engineering 2020 DOI: 10.1117/12.2542565
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• Optical and structural behaviour of InAs quantum dots grown on the Si substrate without Si-Ge graded layer and without migration enhanced epitaxy layer
  Proceedings of SPIE - The International Society for Optical Engineering 2020 DOI: 10.1117/12.2546384
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• In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In-Ga Intermixing
  ACS Applied Electronic Materials 2020 DOI: 10.1021/acsaelm.0c00054
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• Improved carrier transfer in vertically coupled surface and buried InAs Stranski-Krastanov quantum dot system via ex-situ surface state passivation
  Journal of Luminescence 2020 DOI: 10.1016/j.jlumin.2020.117470
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• Enhanced optical performance through growth strategy in coupled InAs P-i-P QDIPs
  Proceedings of SPIE - The International Society for Optical Engineering 2020 DOI: 10.1117/12.2542403
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• Bilayer self-assembled InAs QD using digital alloy capping layer approach: Experiment and theory
  Proceedings of SPIE - The International Society for Optical Engineering 2020 DOI: 10.1117/12.2568820
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