JY
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Publications (4)
- Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO3 FETs Save
- Localized electrothermal annealing for rapid recovery of ambient degradation in indium oxide transistors via COMSOL simulations and experimental characterization Save
- Determination of donor- and acceptor-like interface trap density using photoresponsive GIDL in vertically stacked Si-NW GAA FETs Save
- Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs Save