Utpreksh Patbhaje

Employment

• Indian Institute of Science Bangalore Research Scholar
  2019 - 2024

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (22)

• Inverse Piezoelectricity and Carrier-Mediated Phase Instability as Intrinsic Limits in Two-Dimensional Transition Metal Dichalcogenide-Based Devices
  ACS Nano 2026 DOI: 10.1021/acsnano.6c04751
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• In-Plane Field Enabled Dissociation Dynamics of Defect-Bound Excitons and Excitonic Oscillator Strength Redistribution in Monolayer WS2
  ACS Nano 2025 DOI: 10.1021/acsnano.5c02314
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• Discovery of dynamic nature of 0D potential wells and potential walls in 2D TMD device systems
  NPJ 2D MATERIALS AND APPLICATIONS 2025 DOI: 10.1038/S41699-025-00641-6
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• Impact ionization and the paradox of defects in transition metal dichalcogenide FETs
  NPJ 2D MATERIALS AND APPLICATIONS 2025 DOI: 10.1038/S41699-024-00521-5
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• Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate Architecture
  IEEE Journal of the Electron Devices Society 2025 DOI: 10.1109/JEDS.2025.3591152
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• Small Signal Analysis of Degradation and Breakdown in TMD FETs
  2025 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2025 DOI: 10.1109/IRPS48204.2025.10983651
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• Unveiling inverse piezoelectricity and field induced nonvolatile strain in 2D TMDs
  NPJ 2D MATERIALS AND APPLICATIONS 2025 DOI: 10.1038/S41699-025-00564-2
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• MoS2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation
  ACS NANO 2024 DOI: 10.1021/ACSNANO.3C09428
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• Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs
  2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 2024 DOI: 10.1109/IRPS48228.2024.10529469
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• Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering
  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 2024 DOI: 10.1109/JEDS.2023.3345020
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