0009-0002-0699-9241 About
Alternative negative weight for simpler hardware implementation of synapse device based neuromorphic system
Employment
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Pohang University of Science and Technology
Education
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Pohang University of Science and Technology
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Publications (12)
- Improved Ec control in Hf1−xZrxO2 FeNAND applications using SiO2 nanolaminate structure Save
- RC Delay-Based Gate Voltage Modulation in Hybrid 1T-1R Memory Device for Precise Multi-Level Control Save
- Ionic Field-Effect Transistor Achieving Large Memory Window and Enhanced Retention via Ultrathin Ozone-Oxidized Barrier Layer Save
- Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory Save
- Hybrid FeFET-ECRAM Device for Enhanced Memory Window and Retention via Ion-Ferroelectric Synergy Save
- Highly Scalable Vertical Bypass RRAM Using Interface-Type Resistive Switching Mechanism for V-Nand memory Applications Save
- Enhanced Memory Window and Excellent Endurance in FeFET With Ultrathin 2DEG Oxide Channel Save
- Excellent Endurance (> 1013) of Charge Trap Memory Based on HxWO3 Charge Trap Layer With Shallow Trap Level Using Hydrogen Spillover Save
- Bypass Resistive RAM With Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications Save
- Publisher's Note: “Improving the selector characteristics of ovonic threshold switch via UV treatment process” [Appl. Phys. Lett. 123, 242103 (2023)] Save