Rahul Rai

Employment

• National Yang Ming Chiao Tung University Postdoctoral Researcher
  2026 - Present
• Indian Institute of Technology Kanpur PhD
  2018 - 2026

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (9)

• Demonstrating the Effects of Growth Temperatures of Al(In)GaN Back Barrier on Transport Properties of InAlGaN/GaN Heterostructures
  ECS Journal of Solid State Science and Technology 2026 DOI: 10.1149/2162-8777/ae363f
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• Cryogenic Temperature Electrical Characterization of Enhancement-Mode Thin Barrier AlGaN/GaN HEMT With Hybrid Ferroelectric Charge Trap Gate-Stack
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3663344
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• High-Performance Tri-Gate GaN MIS-HEMT With a Lanthanum-Doped Hybrid Ferroelectric Charge-Trap Gate-Stack
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3678162
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• Negative bias threshold voltage instability and gate reliability in GaN tri-gate HEMTs with ferroelectric charge-trap gate stack
  Applied Physics Letters 2025 DOI: 10.1063/5.0283587
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• Demonstration of high threshold voltage Tri-gate hybrid ferroelectric gate stack GaN HEMT with 1.2 GW/cm2 Baliga's figure-of-merit and highly robust TDDB stability
  Applied Physics Letters 2025 DOI: 10.1063/5.0266142
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• Tri-gate Normally-Off Power MIS-HEMT with Different Fin Configuration and Ferroelectric Charge Storage Gate Stack
  2025 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) 2025
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• Enhancement Mode GaN Tri-Gate MISHEMT With Fluorinated HfO₂ as Charge Trapping Layer in Hybrid Ferroelectric Gate Stack
  IEEE Journal of the Electron Devices Society 2025 DOI: 10.1109/JEDS.2025.3649208
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• Improvement of the Enhancement-Mode GaN MIS-HEMTs by Fluorine Doping in the Dielectric Gate Stack
  IEEE Transactions on Nanotechnology 2025 DOI: 10.1109/TNANO.2024.3522371
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• Surface Acoustic Wave Propagation of GaN/Sapphire Integrated with a Gold Guiding Layer
  Sensors 2023 DOI: 10.3390/s23052464
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