0009-0002-5466-8666 Employment
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Publications (16)
- Role of Surface Leakage Conduction in Gate-Edge Charge Redistribution and Channel Electrostatics of AlGaN/GaN HEMTs Save
- III-nitride nanowire heterostructure: an emerging solution for next generation all-color solid state light sources Save
- Role of Lateral Surface Conduction in Barrier Modulation of AlGaN/GaN HEMTs Under Optical Illumination and Elevated Temperature Save
- Role of gate leakage suppression in revealing thermally induced barrier lowering in AlGaN/GaN HEMTs Save
- Increased transconductance linearity in all-epitaxial Nd2O3/AlGaN/GaN MOS HEMTs Save
- All Nitride NbN/AlGaN/GaN Schottky Gate HEMT on (0001) 4H‐SiC: Improved DC Performance and Metallic Passivation Save
- Optimizing the p-Type Conductivity of Sub-10-nm NiO x Films, for Improved Device Characteristics, Ultra-Low Gate Leakage and High Threshold-Voltage Shift of Oxide-Gated GaN/AlGaN HEMTs Save
- Role of Excited Surface States in Increasing $\textit{I}_{\text{OFF}}$ in AlGaN/GaN HEMT: Effect of White Light Illumination and Elevated Temperature Save
- Increased Linearity in All Epitaxy Nd2O3 /AlGaN/GaN MOSHEMT Save
- Role of excited surface states in increasing IOFF in AlGaN/GaN HEMT: Effect of white light illumination and elevated temperature Save