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Publications (5)
- Impact of ferroelectric gate material engineering in SOI tunnel FETs with a buffer layer, δp+ Si1-xGex pocket and dual-stacked source on DC, RF, linearity, and thermal performance Save
- Performance trade-offs in extended channel gate stacked heterojunction tunnel FET: impact of Si1–X Ge X mole fraction on DC, RF, trap, and noise characteristics Save
- Hetero-dielectric step-shaped double-gate TFET on SELBOX substrate with SiGe pocket: suppressed ambipolarity, comprehensive DC, RF, and noise performance evaluation under thermal variation Save
- Analysis of an extended source C-pocket TFET with fully overlapping dual metal gate for enhanced low-power and high-frequency performance Save
- Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers Save