Subrata Mandal

Employment

• Indian Institute of Information Technology Kalyani Visvesvarya Postdoctoral Fellow
  2025 - 2026

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (14)

• Development of voltage-assisted highly-oriented high hydrophobic ZnO nanowire array on metal surface for microfluidics applications
  Surfaces and Interfaces 2026 DOI: 10.1016/j.surfin.2026.109153
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• Investigating the impact of AuNP decoration on SnO2 thin films for enhanced room temperature methane sensing
  Surfaces and Interfaces 2026 DOI: 10.1016/j.surfin.2025.108311
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• Understanding the role of oxygen interstitials in room temperature acetone sensing by Ga-doped ZnO thin film
  Sensors and Actuators B: Chemical 2025 DOI: 10.1016/j.snb.2025.137523
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• Growth of High-Hole Mobility Stable ST12-Ge Thin Film on Si Substrate for Developing Metal-Oxide–Semiconductor (MOS) Devices
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/ted.2025.3546933
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• Fabrication of room temperature acetone sensor using Ga-doped ZnO thin film
  2025 IEEE Applied Sensing Conference (APSCON) 2025 DOI: 10.1109/apscon63569.2025.11144107
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• Fabrication of High-Quality 100-nm ITO Thin Films in Argon Plasma for Potential Optoelectronic Applications
  IEEE Transactions on Plasma Science 2025 DOI: 10.1109/TPS.2025.3622913
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• Voltage-assisted selective growth of ZnO nanowires on metal/semiconductor surfaces employing hydrothermal double-step CBD/CBD growth technique
  Journal of Materials Science: Materials in Electronics 2023 DOI: 10.1007/s10854-023-11714-x
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• Nonequilibrium VLS-grown stable ST12-Ge thin film on Si substrate: a study on strain-induced band engineering
  Journal of Materials Science 2023 DOI: 10.1007/s10853-023-08724-9
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• Selective growth of ZnO nanowires by employing voltage-assisted hydrothermal growth technique
  2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) 2022 DOI: 10.1109/edkcon56221.2022.10032869
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• Development of substrate engineered Si-<111>/[100] Patterned Features by anisotropic wet etching with Pt/Pt3Si mask
  Materials Chemistry and Physics 2022 DOI: 10.1016/j.matchemphys.2022.126783
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