Ellapu Bhanu Prakash
Madanapalle Institute of Technology & Science, Visakha Institute of Engineering and Technology, National Institute of Technology, Jawaharlal Nehru Technological University, Kakinada, Andhra University
0009-0007-5483-8887
About
Ellapu Bhanu Prakash received his Bachelor of Engineering (B.E.) degree in Electronics and Communication Engineering from Andhra University, Visakhapatnam, India, in 2016. He completed his Master of Technology (M.Tech.) in VLSI and Embedded Systems from Jawaharlal Nehru Technological University, Kakinada, India, in 2019. From 2019 to 2022, he served as an Assistant Professor in the Department of Electronics and Communication Engineering at Visakha Institute of Engineering and Technology, Visakhapatnam, India. He is currently pursuing a Ph.D. in the Department of Electronics and Communication Engineering at the National Institute of Technology Mizoram, India, since 2022. His research interests include modeling and simulation of Silicon and III–V semiconductor devices, compound semiconductors, Tunnel FETs, AlGaN/GaN HEMTs, Solar cell, Biosensing, Nanoelectronics, Gate-All-Around (GAA) FETs, VLSI, embedded systems, and the Internet of Things (IoT).
Employment
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Madanapalle Institute of Technology & Science Assistant Professor2026 - Present
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Visakha Institute of Engineering and Technology Assistant Professor2019 - 2022
Education
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National Institute of Technology Ph.D2022 - 2026
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Jawaharlal Nehru Technological University, Kakinada M.Tech2017 - 2019
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Andhra University B.E2013 - 2016
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Sai Ganapathi Polytechnic Diploma2010 - 2013
Projects & Funding
Projects & funding information is unavailable.
Publications (24)
- Engineered AlGaN/GaN HEMT With β‐Ga2O3 Buffer, Graded AlGaN Back Barrier, and Gate Field Plate for Enhanced Breakdown of 544 V and RF Performance of 110 GHz Save
- Strain-engineered Ge-source double-gate TFET with Si/SiGe/Si channel for low-power and THz frequency applications Save
- Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit Save
- Investigating the Effect of AlGaN Back Barrier in Buffer Free AlGaN/GaN HEMTs with Stacked HfO2/SiN Passivation for High Frequency Applications Save
- Investigating the Temperature‐Induced Variations on the DC, Linearity Distortion and Analog/RF Performance of Ge‐Source DG‐TFETs Save
- Design and optimization of a buffer-free AlGaN/GaN HEMT with dielectric stack engineering for high power and frequency applications Save
- Design and Analysis of High-k Stacked Nanosheet Gate-All-Around FET for Improved Performance Save
- Exploring the Resilience Nature of AlN Cap Layer in AlGaN/GaN HEMT Under Thermal Conditions Save
- Investigation of the Effects of AlN Cap Thickness and Field Plate Length on Breakdown and RF Performance of AlGaN/GaN HEMTs Save
- Temperature Induced Variations in Electrical Characteristics and Performance of Gate All Around FET Save