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Publications (3)
- Enhancing Resistive Switching Characteristics of MoS₂-Based Memristor Through O₂ Plasma Irradiation-Induced Defects Save
- To be appear at VLSID 2024 Finding a Promising Oxide Material for Resistive Random Access Memory with Graphene Electrode Save
- Analysis and Modeling of Bipolar Resistive Switching in 2-D Graphene Electrode- Based Memristor Save