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Publications (5)
- Temperature-dependent analysis of SiC SJ-TG-IGBT with split collector for reduced losses and high breakdown voltage Save
- Buffer-Engineered SiC Trench Gate IGBT for Low On-State Specific Resistance and High Current Density Save
- Wide bandgap Materials: Revitalizing Power Electronics with Advances in Power Semiconductor Devices Save
- Enhanced VDMOS design with reduced parasitic effect Save
- Gate Engineered IGBT with Improved Device Performance Save