Abhishek Mishra

Employment

• Indian Institute of Technology Kanpur
  2018 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (14)

• Low-Profile Miniaturized Switchable Metamaterial Absorber for Space-Borne Application
  IEEE Journal on Miniaturization for Air and Space Systems 2026 DOI: 10.1109/JMASS.2026.3707323
  +Save
• Temperature Facilitated Multi-Resonance Reconfigurability in Terahertz Metasurface and Subsequent Development of Dual Channel Heat Sensor
  IEEE Journal of Selected Topics in Quantum Electronics 2026 DOI: 10.1109/JSTQE.2026.3677467
  +Save
• Frequency reconfigurable absorber using a uniform vanadium dioxide film-based substrate thickness modulator
  Journal of Physics D: Applied Physics 2026 DOI: 10.1088/1361-6463/ae4a33
  +Save
• A Multifunctional Frequency Selective Surface for Radar Countermeasures Using Time Modulation and Scattering Cancellation
  IEEE Transactions on Antennas and Propagation 2026 DOI: 10.1109/TAP.2026.3721897
  +Save
• Checkerboard Phase-Cancellation based Band Reconfigurable Radar Cross Section Reduction Using Vanadium Dioxide
  IEEE Antennas and Wireless Propagation Letters 2026 DOI: 10.1109/LAWP.2026.3729733
  +Save
• Thermally tunable dual channel toroidal metasurface on VO2 platform
  Journal of Applied Physics 2025 DOI: 10.1063/5.0269882
  +Save
• Bifunctional Metasurface for Linear Polarization Conversion and Absorption using Vanadium Dioxide
  2024 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON) 2024 DOI: 10.1109/mapcon61407.2024.10922905
  +Save
• Switchable and Tunable Salisbury Screen Microwave Absorber Based on a Uniform Vanadium Dioxide Film
  IEEE Antennas and Wireless Propagation Letters 2024 DOI: 10.1109/LAWP.2024.3446452
  +Save
• Comparative Analysis of Switching Efficiency of GeTe and VO2 based RF Switches
  2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2024 DOI: 10.1109/edtm58488.2024.10511535
  +Save
• Tunable insulator–metal transition in epitaxial VO2 thin films via strain and defect engineering
  Nanoscale Advances 2024 DOI: 10.1039/d4na00682h
  +Save