Ashvinee Deo Meshram

Employment

• Manipal University Jaipur Assistant Professor
  2025 - Present

Education

• Indian Institute of Technology Kharagpur Research Scholar
  2018 - 2026
• PDPM Indian Institute of Information Technology Design and Manufacturing Jabalpur M. TECH.
  2016 - 2018
• Jabalpur Engineering College B. E.
  2009 - 2013

Projects & Funding

Projects & funding information is unavailable.

Publications (12)

• Surface potential-based analytical modeling of charge and drain current in asymmetric β-Ga2O3 nanomembrane MOSFETs
  Anumita Sengupta, Ashvinee Deo Meshram, Tarun Kanti Bhattacharyya

  +1 more

  • Gourab Dutta
  Journal of Physics D: Applied Physics 2026 DOI: 10.1088/1361-6463/ae4fd7
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• Physics-based analytical modeling of β-(AlxGa 1-x )2O3/Ga2O3 MODFETs considering parasitic conduction through delta-doped layer
  Ashvinee Deo Meshram, Debanu Das, Sandra K Joseph

  +3 more

  • Anumita Sengupta
  • Tarun Kanti Bhattacharyya
  • Gourab Dutta
  Journal of Physics D: Applied Physics 2025 DOI: 10.1088/1361-6463/adeabc
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• Breakdown voltage enhancement techniques in ß-Ga2O3 nanomembrane MESFETs
  Anumita Sengupta, Ashvinee Deo Meshram, Tarun Kanti Bhattacharyya

  +1 more

  • Gourab Dutta
  Proceedings of Conecct 2024 10th IEEE International Conference on Electronics Computing and Communication Technologies 2024 DOI: 10.1109/CONECCT62155.2024.10677232
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• Design Space of β-(AlxGa1-x)2O3/Ga2O3Double Heterojunction Field-Effect Transistors for High-Power Applications
  Ashvinee Deo Meshram, Anumita Sengupta, Tarun Kanti Bhattacharyya

  +1 more

  • Gourab Dutta
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3408771
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• Impact of Device Parameters on the Performance of β-Ga2O3Nanomembrane MESFETs
  Anumita Sengupta, Ashvinee Deo Meshram, Tarun Kanti Bhattacharyya

  +1 more

  • Gourab Dutta
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3367317
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• ON- and OFF-State Performance of Normally-OFF β-(AlxGa1-x)2O3/Ga2O3 MODFETs with p-GaN Gate
  Ashvinee Deo Meshram, Anumita Sengupta, Tarun Kanti Bhattacharyya

  +1 more

  • Gourab Dutta
  2023 IEEE 20th India Council International Conference (INDICON) 2023 DOI: 10.1109/indicon59947.2023.10440732
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• Normally-Off β-(AlxGa1−x)2O3 /Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation
  Ashvinee Deo Meshram, Anumita Sengupta, Tarun Kanti Bhattacharyya

  +1 more

  • Gourab Dutta
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/ted.2022.3232049
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• Effect of Ferroelectric Thickness Variation in Undoped HfO2-Based Negative-Capacitance Field-Effect Transistor
  Bhaskar Awadhiya, Pravin Neminath Kondekar, Ashvinee Deo Meshram
  Journal of Electronic Materials 2019 DOI: 10.1007/s11664-019-07483-1
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• Investigating Undoped HfO2 as Ferroelectric Oxide in Leaky and Non-Leaky FE–DE Heterostructure
  Bhaskar Awadhiya, Pravin Neminath Kondekar, Ashvinee Deo Meshram
  Transactions on Electrical and Electronic Materials 2019 DOI: 10.1007/s42341-019-00137-3
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• Understanding negative differential resistance and region of operation in undoped HfO2-based negative capacitance field effect transistor
  Bhaskar Awadhiya, Pravin Neminath Kondekar, Ashvinee Deo Meshram
  Applied Physics A 2019 DOI: 10.1007/s00339-019-2718-2
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• Analogous behavior of FE-DE heterostructure at room temperature and ferroelectric capacitor at Curie temperature
  Bhaskar Awadhiya, Pravin Neminath Kondekar, Ashvinee Deo Meshram
  Superlattices and Microstructures 2018 DOI: 10.1016/j.spmi.2018.09.015
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• Passive voltage amplification in non‐leaky ferroelectric–dielectric heterostructure
  Bhaskar Awadhiya, Pravin Neminath Kondekar, Ashvinee Deo Meshram
  Micro and Nano Letters 2018 DOI: 10.1049/mnl.2018.5172
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