NP
Nitin Prasad
National Institute of Standards and Technology, University of Maryland at College Park, The University of Texas at Austin, Indian Institute of Technology Madras
Research areas: Materials Science · Materials Chemistry · 2D Materials and Applications · Graphene research and applications · Advancements in Semiconductor Devices and Circuit Design
0000-0001-8088-0164
Employment
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National Institute of Standards and Technology Postdoctoral Research Associate2020 - Present
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University of Maryland at College Park Postdoctoral Research Associate2020 - Present
Education
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University of Texas at Austin M. S. E.2014 - Present
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Indian Institute of Technology Madras B. Tech. (Hons.)2010 - 2014
Projects & Funding
Projects & funding information is unavailable.
Publications (23)
- Unbiased random bitstream generation using injection-locked spin-torque nano-oscillators Save
- Emergence of Interlayer Coherence in Twist-Controlled Graphene Double Layers Save
- Associative memories using complex-valued Hopfield networks based on spin-torque oscillator arrays Save
- Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions Save
- Method to enhance resonant interlayer tunneling in bilayer-graphene systems Save
- Quantum Lifetime Spectroscopy and Magnetotunneling in Double Bilayer Graphene Heterostructures Save
- Realizing both short- and long-term memory within a single magnetic tunnel junction based synapse Save
- Enhancement of Resonance by the Use of Multiple Tunnel Barriers in Bilayer Graphene-Based Interlayer Tunnel Field Effect Transistors Save
- Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures Save
- Conversion of spin current into charge current in a topological insulator: Role of the interface Save
- Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe2 Heterostructures Save
- Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications Save
- Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures Save
- Double bilayer graphene-WSe<inf>2</inf> resonant tunneling heterostructures with high interlayer current densities and peak-to-valley ratios Save
- ReS2-based interlayer tunnel field effect transistor Save
- Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors Save
- Insights into interlayer tunnel FET performance improvement: Lessons learned from graphene hexagonal boron nitride heterostructures Save
- Multi-barrier inter-layer tunnel field-effect transistor Save
- Design of nuclear instrumentation for Space-based Proton-Electron Energy Detector (SPEED) Save
- Parameter extraction methodology for SOI-LDMOS transistors Save