Joydeep Ghosh

Employment

• SRM University, Andhra Pradesh Assistant Professor
  2026 - Present

Education

• TU Wien PhD
• Chemnitz University of Technology M.S.
• Jadavpur University B.E.

Projects & Funding

Projects & funding information is unavailable.

Publications (36)

• Efficient machine learning-assisted failure analysis method for circuit-level defect prediction
  Machine Learning with Applications 2024 DOI: 10.1016/j.mlwa.2024.100537
  +Save
• Efficient Machine Learning-Assisted Failure Analysis Method for Circuit-Level Defect Prediction
  Ssrn 2023 DOI: 10.2139/ssrn.4627003
  +Save
• A Simulation Approach to Analyze Bridge-Defects in a 6T-SRAM Bit Cell
  6th IEEE Electron Devices Technology and Manufacturing Conference Edtm 2022 2022 DOI: 10.1109/EDTM53872.2022.9798365
  +Save
• Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability
  ACS Nano 2022 DOI: 10.1021/acsnano.2c04504
  +Save
• Significance of activation functions in developing an online classifier for semiconductor defect detection
  Knowledge Based Systems 2022 DOI: 10.1016/j.knosys.2022.108818
  +Save
• Bridge-Defect Prediction in SRAM Circuits Using Random Forest, XGBoost, and LightGBM Learners
  International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2021 DOI: 10.1109/SISPAD54002.2021.9592539
  +Save
• Innovative use of TCAD Process Simulation for Device Failure Analysis
  Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2021 DOI: 10.1109/IPFA53173.2021.9617254
  +Save
• Transfer Learning-Based Artificial Intelligence-Integrated Physical Modeling to Enable Failure Analysis for 3 Nanometer and Smaller Silicon-Based CMOS Transistors
  ACS Applied Nano Materials 2021 DOI: 10.1021/acsanm.1c00960
  +Save
• Impact of COVID-19 Pandemic on the Working Structure of Research Organizations in Singapore
  Ssrn 2020 DOI: 10.2139/ssrn.3747885
  +Save
• Spin extraction from a semiconductor through a space-charge layer and critical current density
  Superlattices and Microstructures 2020 DOI: 10.1016/j.spmi.2019.106351
  +Save
• Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique
  IEEE Transactions on Nanotechnology 2020 DOI: 10.1109/TNANO.2020.2994640
  +Save
• A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures
  Joydeep Ghosh, Sudipta Das, Sudipta Mukherjee

  +2 more

  • Swaroop Ganguly
  • Apurba Laha
  Microelectronic Engineering 2019 DOI: 10.1016/j.mee.2019.111097
  +Save
• Efficient two-level parallelization approach to evaluate spin relaxation in a strained thin silicon film
  Journal of Computational Electronics 2019 DOI: 10.1007/s10825-018-1274-x
  +Save
• Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures
  Mihir Date, Sudipta Mukherjee, Joydeep Ghosh +4 more
  Japanese Journal of Applied Physics 2019 DOI: 10.7567/1347-4065/ab39d0
  +Save
• Temperature Dependent Variability Analysis of Threshold Voltage and On-Current for Optimum Switching Performance by Gallium Nitride-based Junctionless FinFET
  2019 Electron Devices Technology and Manufacturing Conference Edtm 2019 2019 DOI: 10.1109/EDTM.2019.8731157
  +Save
• Modeling charge density in AlGaN/AlN/InGaN/GaN-based double heterostructures including InGaN layer strain relaxation
  Journal of Physics Communications 2018 DOI: 10.1088/2399-6528/aaf3c1
  +Save
• Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study
  International Journal of RF and Microwave Computer-Aided Engineering 2018 DOI: 10.1002/mmce.21455
  +Save
• Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor states
  Japanese Journal of Applied Physics 2018 DOI: 10.7567/JJAP.57.080305
  +Save
• Multilevel parallelization approach to estimate spin lifetime in silicon: Performance analysis
  2018 Joint International Eurosoi Workshop and International Conference on Ultimate Integration on Silicon Eurosoi Ulis 2018 2018 DOI: 10.1109/ULIS.2018.8354770
  +Save
• Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures
  Arxiv 2017 DOI: 10.48550/arXiv.1712.03419
  +Save