Nayana Remesh

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Publications (5)

• Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications
  Journal of Applied Physics 2021 DOI: 10.1063/5.0045952
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• Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/TED.2020.2989421
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• A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias
  physica status solidi (a) 2020 DOI: 10.1002/pssa.201900794
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• Enabling Transfer of Ultrathin Layers of GaN for Demonstration of a Heterogenous Stack on Copper Heat Spreader
  IEEE Transactions on Components, Packaging and Manufacturing Technology 2020 DOI: 10.1109/TCPMT.2019.2962551
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• Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model
  IEEE Transactions on Electron Devices 2019 DOI: 10.1109/TED.2018.2882533
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