SURESH DURAI

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Post-doctoral Researcher at Indian Institute of Technology Madras

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Publications (11)

• Impact of Eccentricity on the Performance of Nanotube Phase‐Change Memory Devices
  physica status solidi (RRL) – Rapid Research Letters 2025 DOI: 10.1002/pssr.202400424
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• Impact of process-induced ellipticity on the RESET process of cylindrical phase change memory devices
  Physica Scripta 2022 DOI: 10.1088/1402-4896/ac9dcd
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• Impact of process-induced variability on multi-bit phase change memory devices
  Microelectronics Journal 2022 DOI: 10.1016/j.mejo.2022.105638
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• Multilevel Switching in Phase‐Change Photonic Memory Devices
  physica status solidi (RRL) – Rapid Research Letters 2021 DOI: 10.1002/pssr.202100291
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• Realization of 4-Bit Multilevel Optical Switching in Ge2Sb2Te5 and Ag5In5Sb60Te30 Phase-Change Materials Enabled in the Visible Region
  ACS Applied Electronic Materials 2020 DOI: 10.1021/acsaelm.0c00809
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• Impact of crystallization process in multilevel optical switching in Ge2Sb2Te5 and Ag5In5Sb60Te30 phase-change materials
  Journal of Physics D: Applied Physics 2020 DOI: 10.1088/1361-6463/abb50c
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• Impact of Thermal Boundary Resistance on the Performance and Scaling of Phase-Change Memory Device
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 2020 DOI: 10.1109/TCAD.2019.2927502
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• Impact of process-induced variability on the performance and scaling of Ge2Sb2Te5 Phase-change memory device
  Semiconductor Science and Technology 2020 DOI: 10.1088/1361-6641/ab7214
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• An extremely fast, energy-efficient RESET process in Ge2Sb2Te5 phase change memory device revealed by the choice of electrode materials and interface effects
  Semiconductor Science and Technology 2020 DOI: 10.1088/1361-6641/ab591a
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• Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices
  Scientific Reports 2016 DOI: 10.1038/srep37868
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