SA
Shivansh Awasthi
Chalmers University of Technology
Research areas: Engineering · Electrical and Electronic Engineering · GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Advancements in Semiconductor Devices and Circuit Design
0000-0002-0467-5860
Employment
- 2026 - Present
Education
Education history is unavailable.
Projects & Funding
Projects & funding information is unavailable.
Publications (13)
- Tunable non-resonant terahertz detection using asymmetric double gate InAlGaN/GaN HEMT Save
- Resonance-Based Object Sensing System for Soft Robotic Skin in Human Cooperative Robots Save
- Resonance-Based Sensing on Large Surfaces Using RF Excitation for Human–Machine Interaction Save
- Mitigation of Buffer Trap Induced Current Collapse in Quaternary Double Channel Graded-Barrier InAlGaN/GaN HEMTs Save
- Scaling Limits and Reliability Challenges of Nanoscale GaN HEMTs: A Path Toward Advanced Node Benchmarking for DC and RF Applications Save
- Wireless Powered Passive Resonant-Based Omnidirectional Sensing System in Human Cooperative Robots Save
- Large-Signal Performance of 0.1-μm AlGaN/GaN HEMT on SiC Under EHF Stress for V-Band Save
- A computational approach to optimize the linearity in dual-gate InAlGaN/AlN/GaN HEMTs Save
- Comparative Analysis of TCAD augmented ML Algorithms in modeling of AlGaN/GaN HEMTs Save
- DC, RF and Noise Characterization of AlGaN/GaN HEMT Save
- Passive RF Resonant Receiver with Voltage Gain for Wireless Power Transfer System Save
- Simulation-based study of current gain peaks h21at low gate bias in AlGaN/GaN HEMTs Save
- Nanoscale material parameters based modeling of thermal noise in GaN HEMTs Save