AJAYAN J

Employment

• SR Engineering College Associate Professor
  2021 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (90)

• A review on organic electrochemical transistors (OECTs): Materials, device physics, challenges and applications
  Journal of Science: Advanced Materials and Devices 2026 DOI: 10.1016/j.jsamd.2026.101269
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• AlGaN/GaN HEMTs with field plate designs for high power and radio frequency applications: A review
  Journal of Science: Advanced Materials and Devices 2026 DOI: 10.1016/j.jsamd.2026.101267
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• Ga2O3 material and device for sensor: status, challenges, and perspectives
  Sensors and Actuators A: Physical 2026 DOI: 10.1016/j.sna.2026.118566
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• Effect of In Mole Fraction on Gamma Ray Shielding Properties of InxAl1–xAs Material
  ACS Omega 2026 DOI: 10.1021/acsomega.6c09106
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• Improvement of the Breakdown Voltage of GaN HEMTs Using a Back Electrode and a High-k Passivation Layer
  Semiconductors 2026 DOI: 10.1134/S1063782626602104
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• Design of a High-Speed Bit-length-Independent FinFET-based Hybrid Carry Look Ahead-Carry Skip Adder for Future Signal Processing Systems
  Journal of Circuits, Systems and Computers 2026 DOI: 10.1142/S0218126626502877
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• Introduction of emerging semiconductor devices for low-power and high-speed digital/analog integrated circuit applications
  2026 DOI: 10.1201/9781003635123-1
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• Recent trends in light-emitting diodes with applications
  2026 DOI: 10.1201/9781003635123-7
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• A novel high performance FinFET based multioutput hybrid carry skip-carry look ahead (CS-CLA) adder for future processors and cryptographic hardware
  B Sandhya Rani, J. Ajayan, Sandip Bhattacharya +3 more
  Engineering Research Express 2026 DOI: 10.1088/2631-8695/ae8146
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• Influence of Defects on the Electrical Performance of InAlAs/InGaAs Schottky Barrier Diodes
  Semiconductors 2026 DOI: 10.1134/S1063782625604492
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• Simulation-Driven Study of Neutron Irradiation Effects in InxGa1−xAs Material
  ECS Journal of Solid State Science and Technology 2026 DOI: 10.1149/2162-8777/ae613d
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• A Novel Design of Miniaturized Heptagonal Koch Fractal Wide Band Antenna for 5G mmWave Applications
  2026 DOI: 10.1007/978-3-032-12999-4_53
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• Advanced Classification of Ischemic and Hemorrhagic Stroke Using Deep Learning Framework
  J. M. Radhika, J. Ajayan, Sandip Bhattacharya +1 more
  2026 DOI: 10.1007/978-981-96-7292-9_6
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• Brain Stroke CT Image Optimization Using Contrast-Limited Adaptive Histogram Equalization with Global Contrast Adjustment
  2026 DOI: 10.1007/978-981-96-5732-2_20
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• Complementary Field Effect Transistor (CFET) for the 2-nm Technology Node: A Review From Device to Circuit Perspectives
  IEEE Journal of the Electron Devices Society 2026 DOI: 10.1109/JEDS.2025.3647724
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• Design and Modeling of a Dual-Nanogap Triple-Heterojunction Split-Gate T-Shaped Channel Vertical DMDG-TFET With Source Pockets for Biosensing
  Kondavitee Girija Sravani, Rapolu Anil Kumar, T. Srinivasa Ravi Kiran +3 more
  IEEE Access 2026 DOI: 10.1109/ACCESS.2026.3669996
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• Performance and Sensitivity Analysis of TFET-Based Biosensors Using Gate-Overlap and Source-Pocket Engineering
  IEEE Journal of the Electron Devices Society 2026 DOI: 10.1109/JEDS.2026.3751329
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• WSe2-FETs: Device Architectures, Progress in Doping Strategies, Contact Engineering, Reliability Challenges, and Exciting Prospects for Next-Generation Low-Power Nanoelectronics
  J. Ajayan, S. Sreejith, B. Mounika +5 more
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3726918
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• Improvement of radiation hardness for a novel InP-based HEMT with graded In1-xGaxAs channel layer and double Si-doped structure
  Results in Engineering 2025 DOI: 10.1016/j.rineng.2025.108000
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• Recent developments in AlGaN/GaN MOSHEMTs for future high power RF electronics: A review
  Micro and Nanostructures 2025 DOI: 10.1016/j.micrna.2025.208339
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