MB
0000-0002-8270-4647 Employment
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Publications (39)
- Electrostatic Analysis of AlN/GaN HEMTs Using β-Ga2O3 Buffer on SiC and β-Ga2O3 Wafers for 5G/6G Wireless Infrastructure and Future Sub-THz Applications Save
- A review of microelectronic AlGaN/GaN HEMT biosensors for the detection of various cancer diseases and bacterial/viral pathogens Save
- Advances and Exciting Prospects in Forksheet FET Technology for Sustainable Scaling for Future Analog/RF and Digital Integrated Circuit Applications: A Review Save
- Comprehensive evaluation of T-gated AlN/GaN/SiC MOSHEMTs with ZrO2/Al2O3 dielectrics towards performance enhancement through lateral scaling and passivation optimization for power switching and RF applications Save
- Early Detection and Classification of Alzheimer's through Integration of 3D Local Binary Patterns and SVM classifier Save
- High-performance AlN/GaN/AlGaN-MOSHEMTs on SiC wafer: scaling and gate material innovations for upcoming radar and communication systems Save
- Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems Save
- Inorganic nanocatalysts for energy systems, environmental/industrial processes and healthcare applications: A comprehensive review Save
- Nanoscale recessed T-gated ScAlN/GaN-HEMT on SiC wafer with graded back-barrier and Fe-doped buffer for future RF power amplifiers: a simulation study Save
- Recent developments in AlGaN/GaN MOSHEMTs for future high power RF electronics: A review Save
- Recent developments in organic photodetectors for future industrial applications: A review Save
- Solar Cells PIN and NIP Perovskite Save
- 2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications Save
- A Comprehensive Study on Recess Gated Fe-Doped AlN/GaN/AlGaN HEMT for Next Generation Broadband Power Amplifiers Save
- A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers Save
- A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications Save
- Analysis of Energy Efficient Reverse Carry Select Inexact Full Adders for Future In-Memory Computing and Internet of Things Applications Save
- Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics Save
- Human Activity Recognition Based On Video Summarization And Deep Convolutional Neural Network Save
- LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications Save