Dip Das

Employment

• University College London
• Technion – Israel Institute of Technology

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (14)

• Halide Mixing-Driven Modulation of Synaptic Plasticity in Lead-Free Double Perovskite Memristors for Advanced Neuromorphic Computing
  Susmita Das, Shashikana Paria, Dip Das +4 more
  ACS Applied Materials & Interfaces 2026 DOI: 10.1021/acsami.6c11098
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• Leaky Integrate‐and‐Fire Model and Short‐Term Synaptic Plasticity Emulated in a Novel Bismuth‐Based Diffusive Memristor
  Advanced Electronic Materials 2024 DOI: 10.1002/aelm.202300865
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• Modulation of the optical and transport properties of epitaxial SrNbO3 thin films by defect engineering
  Shammi Kumar, Jibril Ahammad, Dip Das +3 more
  Journal of Applied Physics 2024 DOI: 10.1063/5.0179267
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• Positive and Negative Pressure Regimes in Anisotropically Strained V2O3 Films
  Advanced Functional Materials 2023 DOI: 10.1002/adfm.202211801
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• Experimental and theoretical evidence of ion engineering in nanocrystalline molybdenum disulfide memristors for non-filamentary switching actions and ultra-low-voltage synaptic features
  Dip Das, Joshua Asirvatham, Minh Anh Luong +3 more
  Journal of Materials Chemistry C 2023 DOI: 10.1039/D2TC01712A
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• Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study
  A. Roy Barman, Dip Das, Sujit Deshmukh +9 more
  ACS Applied Materials & Interfaces 2022 DOI: 10.1021/acsami.2c05089
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• Influence of Nanoscale Charge Trapping Layer on the Memory and Synaptic Characteristics of a Novel Rubidium Lead Chloride Quantum Dot Based Memristor
  Ujjal Das, Pranab Kumar Sarkar, Dip Das +2 more
  Advanced Electronic Materials 2022 DOI: 10.1002/aelm.202101015
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• Resistive switching properties and photoabsorption behavior of Ti ion implanted ZnO thin films
  Ashis Kumar Manna, P. Dash, Dip Das +5 more
  Ceramics International 2022 DOI: 10.1016/j.ceramint.2021.10.106
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• Metal-induced progressive alteration of conducting states in memristors for implementing an efficient analog memory: a DFT-supported experimental approach
  Dip Das, A. Roy Barman, Pranab Kumar Sarkar +6 more
  Journal of Materials Chemistry C 2021 DOI: 10.1039/D0TC04918B
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• Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3- xClxPerovskite for RRAM Application
  Ujjal Das, Dip Das, Bappi Paul +6 more
  ACS Applied Materials and Interfaces 2020 DOI: 10.1021/acsami.0c10123
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• Synergistic Effect of Singly Charged Oxygen Vacancies and Ligand Field for Regulating Transport Properties of Resistive Switching Memories
  Dip Das, A. Roy Barman, Santosh Kumar +5 more
  Journal of Physical Chemistry C 2019 DOI: 10.1021/acs.jpcc.9b08078
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• Carbon doping controlled thermoluminescent defect centers in nanoporous alumina for ion beam dosimetry
  Sangita Bhowmick, S. Pal, Dip Das

  +6 more

  • Vipin Kumar Singh
  • S. A. Khan
  • René Hübner
  • S. R. Barman
  • D. Kanjilal
  • +1 more
  Journal of Applied Physics 2018 DOI: 10.1063/1.5050246
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• Nanoscale self-recovery of resistive switching in Ar+ irradiated TiO2-x films
  A. Roy Barman, C. P. Saini, Pranab Kumar Sarkar +8 more
  Journal of Physics D: Applied Physics 2017 DOI: 10.1088/1361-6463/aa9013
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• Role of oxygen vacancy on the hydrophobic behavior of TiO2 nanorods on chemically etched Si pyramids
  C. P. Saini, A. Roy Barman, Dip Das +6 more
  Journal of Physical Chemistry C 2017 DOI: 10.1021/acs.jpcc.6b08991
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