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Publications (6)
- Source‐Connected Field‐Plate Effects on Static Current, Trap Signature, and Thermal Resistance of AlGaN/GaN High Electron Mobility Transistor Save
- A New Method to Estimate Surface Donor Density (NTD) in AlGaN/GaN HEMT by Validated DCT Simulations Save
- Fe-doping starting depth impacts on static and transient characteristics of AlGaN/GaN HEMTs Save
- Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy Save
- Influence of Field Plate, Gate Width, and Voltage Dependence of Thermal Resistance (RTH) for AlGaN/GaN HEMT Save
- Estimation of Zero-Field Activation Energy for Traps in Fe- and C-Doped GaN-Based HEMTs Save