Valeria Vadalà

About

Valeria Vadalà was born in Reggio Calabria, Italy, in 1982. She received the M.S. degree cum laude in electronic engineering from the “Mediterranea” University of Reggio Calabria, Reggio Calabria, Italy, in 2006 and the Ph.D. degree in information engineering from the University of Ferrara, Ferrara, Italy, in 2010.
In 2013 she was invited to spend a period as Visiting Fellow at the Telecommunication and Microwave Laboratory (TELEMIC) at the Engineering department of KU Leuven University in Belgium. She is currently Assistant Professor at the Department of Physics, University of Milano-Bicocca where she teaches the course of electronic instrumentation and measurement. Her current research interests include nonlinear electron-device characterization and modeling and circuit-design techniques for nonlinear microwave and millimeter wave applications.

Employment

• University of Milano-Bicocca Physics
  2021 - Present
• Università degli Studi di Roma Tor Vergata Macroarea di Ingegneria Post Doc. Researcher
  2021 - 2021
• Università degli Studi di Ferrara Dipartimento di Ingegneria
  2018 - 2020
• Università degli Studi di Ferrara Dipartimento di Ingegneria Post. Doc.
  2010 - 2018

Education

• Università degli Studi di Ferrara Dipartimento di Ingegneria Ph.D.
  2007 - 2010

Projects & Funding

Projects & funding information is unavailable.

Publications (62)

• Practical Considerations in 7 nm and 16 nm FinFET LNA Design: A Comparative Study
  Electronics 2026 DOI: 10.3390/electronics15153396
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• The 2026 Microwave Theory and Technology Society Graduate Student Fellowship Awards [Education News]
  IEEE Microwave Magazine 2026 DOI: 10.1109/MMM.2026.3687064
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• Physics-Informed Neural Network-Based Model for GaN HEMTs With Temperature Dependence
  IEEE Transactions on Microwave Theory and Techniques 2026 DOI: 10.1109/TMTT.2026.3741497
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• The 2025 MTT-S Graduate Student Fellowship Awards [Education News]
  Valeria Vadalà, Giovanni Crupi, Marco Mercuri +16 more
  IEEE Microwave Magazine 2025 DOI: 10.1109/MMM.2025.3564449
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• Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology
  Electronics 2025 DOI: 10.3390/electronics14071421
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• Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics
  G Purnachandra Rao, Trupti Ranjan Lenka, Valeria Vadalà +1 more
  Physica Scripta 2024 DOI: 10.1088/1402-4896/ad8991
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• On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past
  IEEE Transactions on Microwave Theory and Techniques 2024 DOI: 10.1109/TMTT.2024.3378597
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• The 2024 MTT-S Graduate Student Fellowship Awards [Education News]
  IEEE Microwave Magazine 2024 DOI: 10.1109/MMM.2024.3403311
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• Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications
  G. Purnachandra Rao, Trupti Ranjan Lenka, Valeria Vadalà +1 more
  Engineering Research Express 2024 DOI: 10.1088/2631-8695/ad3db1
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• A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers
  IEEE Access 2024 DOI: 10.1109/ACCESS.2024.3403037
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• A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation
  Electronics 2023 DOI: 10.3390/electronics12132939
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• Active Balun Design for Next-Generation Telecom Satellite Frequency Converters
  IEEE Microwave and Wireless Technology Letters 2023 DOI: 10.1109/LMWC.2022.3212086
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• A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function
  IEEE Microwave and Wireless Technology Letters 2023 DOI: 10.1109/LMWT.2023.3264904
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• Auto‐encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices
  Gaurav Bhargava, Valeria Vadalà, Shubhankar Majumdar +1 more
  International Journal of RF and Microwave Computer-Aided Engineering 2022 DOI: 10.1002/mmce.23339
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• Equivalent‐circuit extraction for gallium nitride electron devices: Direct versus optimization‐empowered approaches
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2022 DOI: 10.1002/jnm.3008
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• An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation
  IEEE Journal of the Electron Devices Society 2021 DOI: 10.1109/JEDS.2021.3067103
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• Scalability of Multifinger HEMT Performance
  IEEE Microwave and Wireless Components Letters 2020 DOI: 10.1109/LMWC.2020.3012181
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• A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations
  IEEE Transactions on Microwave Theory and Techniques 2020 DOI: 10.1109/TMTT.2019.2961078
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• A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology
  Electronics 2018 DOI: 10.3390/electronics7120353
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• Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems
  IEEE Microwave and Wireless Components Letters 2018 DOI: 10.1109/LMWC.2018.2867732
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