Mahesh Soni
Also known as: Mahesh
Nexperia, Lancaster University, Indian Institute of Technology Mandi, Malaviya National Institute of Technology Jaipur, University of Glasgow, Chhatrapati Shivaji Institute of Technology
Research areas: Engineering · Electrical and Electronic Engineering · Nanomaterials and Printing Technologies · Advanced Sensor and Energy Harvesting Materials · Graphene research and applications
About
Hello,
I am Mahesh Soni, Process Interface Engineer at Nexperia.
I have 8+ years of hands-on experience working with front-end-of-line CMOS device processing such as lithography (photo, maskless, electron beam), metallization, thin film deposition, and etching.
I am also proficient with the use of semiconductor parameter analyzer, electrochemical workstation, ellipsometer, profilometer, atomic force microscope, scanning electron microscope, and spectroscopy (Raman, FTIR, UV-VIs).
I possess a keen interest in working at the forefront of research and development for new and novel technologies. I am comfortable learning new things (along with my existing proactive management and technical skills) to deliver to the project and working towards the growth of the organization.
I earned my Ph.D. in electronics engineering at the Indian Institute of Technology Mandi, Mandi (H.P.), India. For my Ph.D., I worked towards the design and fabrication of graphene and derivatives electronic and memory devices.
I completed my M.Tech from Malaviya National Institute of Technology Jaipur, Jaipur (Rajasthan), India where I performed simulations for the design of multi-valued logic circuits using carbon nanotubes-based field-effect transistors.
Employment
-
Nexperia Process Interface Enginer2022 - Present
-
Lancaster University Senior Research Associate2020 - 2022
-
University of Glasgow Research Assistant2018 - 2020
-
GLA University Assistant Professor2012 - 2014
Education
-
Indian Institute of Technology Mandi Research Scholar2014 - 2018
- 2010 - 2012
-
Chhatrapati Shivaji Institute of Technology B.E.2006 - 2010
Projects & Funding
Projects & funding information is unavailable.
Publications (24)
- Highly sensitive electrochemical sensing of neurotransmitter dopamine from scalable UV irradiation-based nitrogen-doped reduced graphene oxide-modified electrode Save
- NrGO Floating Gate/SiOXNY Tunneling Layer Stack for Nonvolatile Flash Memory Applications Save
- PEDOT Save
- NrGO Floating Gate/SiOXNY Tunneling Layer Stack for Nonvolatile Flash Memory Applications Save
- Printed Temperature Sensor Based on PEDOT Save
- High Performance Printed Electronics on Large Area Flexible Substrates Save
- Emerging Techniques and Materials for Water Pollutants Detection Save
- Soft eSkin: distributed touch sensing with harmonized energy and computing Save
- Printed Temperature Sensor based on Graphene oxide/PEDOT:PSS Save
- Low voltage & controlled switching of MoS2-GO resistive layers based ReRAM for non-volatile memory applications Save
- GdVO4 modified fluorine doped graphene nanosheets as dispersed photocatalyst for mitigation of phenolic compounds in aqueous environment and bacterial disinfection Save
- Alternate lanthanum oxide/silicon oxynitride-based gate stack performance enhancement due to ultrathin oxynitride interfacial layer for CMOS applications Save
- Microchannel based Flexible Dynamic Strain Sensor Save
- Fabrication of fluorine doped graphene and SmVO4 based dispersed and adsorptive photocatalyst for abatement of phenolic compounds from water and bacterial disinfection Save
- Islanding of EuVO4 on high-dispersed fluorine doped few layered graphene sheets for efficient photocatalytic mineralization of phenolic compounds and bacterial disinfection Save
- Integration of graphene oxide buffer layer/graphene floating gate for wide memory window in Pt/Ti/Al2O3/GO/graphene/SiO2/p-Si/Au non-volatile (FLASH) applications Save
- Scalable and site specific functionalization of reduced graphene oxide for circuit elements and flexible electronics Save
- Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate: Al/PMMA/NrGO/SiO2/p–Si/Au based hybrid gate stack for non volatile memory applications Save
- Selective detection of F− using Al microarrays integrated graphene oxide Save
- A highly sensitive, flexible SERS sensor for malachite green detection based on Ag decorated microstructured PDMS substrate fabricated from Taro leaf as template Save