Baskaran S

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Publications (14)

• UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications
  S. Baskaran, M. Shunmugathammal, Sivamani Chinnaswamy

  +3 more

  • S. Ravi
  • P. Murugapandiyan
  • Ramkumar Natarajan
  Silicon 2022 DOI: 10.1007/s12633-022-01846-w
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• Design and development of AlGaN/GaN HEMT for biosensing applications for detection of cancers, tumors, and kidney malfunctioning
  Electronic Devices, Circuits, and Systems for Biomedical Applications: Challenges and Intelligent Approach 2021 DOI: 10.1016/B978-0-323-85172-5.00001-0
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• Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO2 as Dielectric Materials
  Lecture Notes in Networks and Systems 2021 DOI: 10.1007/978-981-33-4687-1_49
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• H∞-dCNN: Enhancing the SNR Using Deep Learning Algorithm in Wireless Communication System
  Arabian Journal for Science and Engineering 2021 DOI: 10.1007/s13369-021-06172-8
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• H∞-dCNN: Enhancing the SNR using Deep Learning Algorithm in Wireless Communication System
  ResearchSquare 2021 DOI: 10.21203/rs.3.rs-491094
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• Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications
  IETE Journal of Research 2021 DOI: 10.1080/03772063.2021.1929517
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• Noise analysis of double gate composite InAs based HEMTs for high frequency applications
  Microsystem Technologies 2021 DOI: 10.1007/s00542-020-04955-x
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• Silicon Nitride Back Barrier in AlGaN/GaN HEMT to Enhance Breakdown Voltage for Satellite Applications
  V. Janakiraman, S. Baskaran, D. Kumutha
  Silicon 2021 DOI: 10.1007/s12633-020-00817-3
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• Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
  Journal of Science: Advanced Materials and Devices 2020 DOI: 10.1016/j.jsamd.2020.04.007
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• Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)
  S. Baskaran, A. Mohanbabu, Saminathan Veerappan +7 more
  Journal of Electronic Materials 2020 DOI: 10.1007/s11664-020-08113-x
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• DC and RF Characterization of InAs based Double Delta Doped MOSHEMT Device
  Proceedings of International Conference on 2018 IEEE Electron Device Kolkata Conference, EDKCON 2018 2018 DOI: 10.1109/EDKCON.2018.8770418
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• Noise Characterization of InAs Based DG-HEMT Devices for RF Applications
  Proceedings of International Conference on 2018 IEEE Electron Device Kolkata Conference, EDKCON 2018 2018 DOI: 10.1109/EDKCON.2018.8770495
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• Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices
  Superlattices and Microstructures 2013 DOI: 10.1016/j.spmi.2013.10.019
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• Noise performance of gate engineered double gate MOSFETs for analog and RF applications
  ICECE 2010 - 6th International Conference on Electrical and Computer Engineering 2010 DOI: 10.1109/ICELCE.2010.5700760
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