MP
Murugapandiyan P
SRM Institute of Science and Technology, Anil Neerukonda Institute of Technology & Sciences, Agnel Institute of Technology and Design
Research areas: Engineering · Electrical and Electronic Engineering · GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Advancements in Semiconductor Devices and Circuit Design
0000-0002-2304-452X
Employment
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SRM Institute of Science and Technology Professor2026 - Present
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Anil Neerukonda Institute of Technology and Sciences Associate Professor2018 - 2026
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Agnel Institute of Technology and Design Assistant Professor2015 - 2018
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MAM College of Engineering Assistant Professor2011 - 2015
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MIET Engineering College Assistant Professor2008 - 2011
Education
Education history is unavailable.
Projects & Funding
Projects & funding information is unavailable.
Publications (73)
- Graphene materials and devices for 6G networks: A critical review Save
- Comprehensive Study of Normally-off ScAlN Barrier GaN Transistors on Ultra-wide Bandgap β-Ga2O3: DC and RF Perspectives Save
- Effect of varying In and Al compositions in InAlGaN quaternary barriers for high-performance GaN HEMTs on β-Ga2O3 substrate Save
- Performance Comparison of GaN-based HEMTs on β-Ga2O3 Substrates Using Compositionally-Graded InGaN and AlGaN Back Barriers for High Frequency Applications Save
- Unique Analytical Heat Spreading Model of β-Ga2O3 Buffer Trap Engineered for High Temperature and Frequency Performance of Power AlN/β-Ga2O3 HEMT Save
- Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs) Save
- Advanced Technologies for Federated Learning in Smart Cities and Its Use Cases Save
- Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity Save
- FPGA Implementation of Enhanced Intelligent Signal Processing System for Depression Save
- Advanced Technologies for Federated Learning in Smart Cities and Its Use Cases Save
- Advancing the frontiers of N-polar GaN HEMT technology: materials, architectures, and applications in RF and power electronics Save
- Enhancement of fMAX/fT in α-Ga2O3 MOSFET with ultra-wide bandgap MgO and CaO blocking layers Save
- High-performance GaN-based HEMTs with β-Ga2O3 buffer layer engineering for millimeter-wave applications Save
- Impact of high-k dielectrics on enhancement-mode AlGaN/GaN MISHEMTs: performance comparison with various buffer layers for RF power electronics Save
- Influence of diverse dielectric materials on the performance of enhancement-mode AlGaN/GaN MISHEMTs with a β-Ga2O3 buffer and substrate for RF and power applications Save
- Is SiC a Predominant Technology for Future High Power Electronics?: A Critical Review Save
- Performance Assessment of Deep Learning-Models for Kidney Tumor Segmentation using CT Images Save
- Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance Save
- Recent advancement in β-Ga2O3 MOSFETs: From material growth to device architectures for high-power electronics Save
- Ultra-scaled 55 nm InAlN/InGaN/GaN/AlGaN HEMT on β-Ga2O3 substrate: A TCAD-Based performance analysis for high-frequency power applications Save